Ultra-thin gallium nitride safety capacitor

Related Categories

1 2 3 4 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
917-1110-2-ND	EPC2106	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	14000 Order	--
917-EPC2103ENGR TR-ND	EPC2103ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	5000 Order	500+: $3.4812
917-EPC2104ENG- ND	EPC2104ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-EPC2102ENG- ND	EPC2102ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
TPD3215M-ND	TPD3215M	Transphorm	View more Packaging: Bulk Part Status: Last Time Buy FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V Power - Max: 470W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	77 Order	1+: $129.56 10+: $123.307 25+: $118.839
917-EPC2105ENG- ND	EPC2105ENG	EPC	View more Series: eGaN Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-EPC2106ENGR TR-ND	EPC2106ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	17500 Order	2500+: $0.5477
917-EPC2110ENGR TR-ND	EPC2110ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Source FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 3.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.5V @ 700A Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	12500 Order	2500+: $0.714
917-EPC2103ENG- ND	EPC2103ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-1183-2-ND	EPC2103	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 28A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.4812
917-1182-2-ND	EPC2102	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.4363
917-EPC2101ENGR TR-ND	EPC2101ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	7000 Order	500+: $3.4588
917-EPC2105ENGR TR-ND	EPC2105ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	5500 Order	500+: $3.5149
917-1152-2-ND	EPC2110	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 3.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.5V @ 700A Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Operating Temperature: -40C ~ 150C (TJ) Package / Case: Die Supplier Device Package: Die	22500 Order	2500+: $0.714
917-EPC2104ENGR TR-ND	EPC2104ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	500+: $3.5374
917-1184-2-ND	EPC2104	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.5374
917-EPC2101ENG- ND	EPC2101ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-EPC2102ENGR TR-ND	EPC2102ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A (Tj) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6500 Order	500+: $3.4363
917-1185-2-ND	EPC2105	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.5149
917-EPC2108ENGR TR-ND	EPC2108ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	2500 Order	2500+: $0.5771
917-1169-2-ND	EPC2108	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.5771
917-1180-2-ND	EPC2100	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	7500 Order	500+: $3.4138
917-1174-2-ND	EPC2111	EPC	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	22500 Order	--
917-EPC2100ENGR TR-ND	EPC2100ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6500 Order	500+: $3.4138
917-EPC2107ENGR TR-ND	EPC2107ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	1000 Order	5000+: $0.5839
917-EPC2111ENGR TR-ND	EPC2111ENGRT	EPC	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6000 Order	1000+: $1.1157
917-1168-2-ND	EPC2107	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.6064
917-EPC2100ENG- ND	EPC2100ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-1181-2-ND	EPC2101	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.4588
FDMA1027PTTR-ND	FDMA1027PT	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Power - Max: 700mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: MicroFET 2x2 Thin	1000 Order	1+: $0
IRF5850-ND	IRF5850	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.2A Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 960mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	1000 Order	1+: $0
IRF5852-ND	IRF5852	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.7A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	1000 Order	1+: $0
IRF5810-ND	IRF5810	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Power - Max: 960mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	1000 Order	1+: $0
IRF5851-ND	IRF5851	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.7A, 2.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	1000 Order	1+: $0
QS6K21TRTR-ND	QS6K21TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25C: 1A Vgs(th) (Max) @ Id: 1.5V @ 1mA Power - Max: 1.25W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95) Base Part Number: *K21	1000 Order	--
BSL308CL6327HTS A1TR-ND	BSL308CL6327HTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.3A, 2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 11A Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	1+: $0
CPH6636R-TL-WOS TR-ND	CPH6636R-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Power - Max: 900mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	3000 Order	--
SI3850ADV-T1-GE 3TR-ND	SI3850ADV-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.4A, 960mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Power - Max: 1.08W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Base Part Number: SI3850	1000 Order	1+: $0
SI3588DV-T1-GE3 TR-ND	SI3588DV-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.5A, 570mA Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Power - Max: 830mW, 83mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Base Part Number: SI3588	1000 Order	--
FDC3601NTR-ND	FDC3601N	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1A Rds On (Max) @ Id, Vgs: 500 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Power - Max: 700mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT-6	82 Order	--

1 2 3 4 >

Hot Searches: ultra-thin gallium nitride safety capacitor gallium nitride electrolytic capacitor safety capacitor disc safety capacitors safety resonant block capacitor ultra-thin bus codec delphi automotive electronics and safety functional safety controllers functional safety interface professional capacitor ultra fpga capacitor aluminum ultrasonic capacitor button capacitor chip capacitors wire capacitor ceramic capacitor in-line capacitor shunt capacitor liquid capacitor

Search Result:ultra-thin gallium nitride safety capacitor

Related Categories