Allicdata Part #: | FDMA1027PTTR-ND |
Manufacturer Part#: |
FDMA1027PT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 3A MICROFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3A 700mW Surfa... |
DataSheet: | FDMA1027PT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 435pF @ 10V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UFDFN Exposed Pad |
Supplier Device Package: | MicroFET 2x2 Thin |
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The FDMA1027PT is a semiconductor product manufactured by Fairchild Semiconductor and having a unique set of characteristics that allow it to be used in a wide range of applications. It is a P-channel power MOSFET array containing two identical channels, with each channel containing one N-channel and one P-channel MOSFET. The device is designed for use in switching applications and provides a low on-state resistance (RDS(ON)), high current handling capability, and excellent dynamic characteristics. This makes it suitable for a variety of power management, motor control, and switching applications.
The FDMA1027PT has a variety of features that make it well suited for applications requiring high-side operation. It utilizes Fairchild Semiconductor’s proprietary FET-Tech™ process which provides very good characteristics and performance, particularly when compared to other P-channel MOSFET arrays. The FET-Tech™ process also allows the device to switch at higher frequencies, making it ideal for applications such as switching power supplies, RF amplifiers, and high-speed signal switching.
The FDMA1027PT is constructed using an internally matched pair of N- and P-channel MOSFETs that can be independently controlled. This enables the device to be operated from a single supply and also allows it to switch at higher frequencies due to the reduced switching losses. This makes it ideal for high-frequency power conversion applications where fast switching times and high efficiency are required.
The FDMA1027PT also has very low on-state resistances (RDS(ON)), ranging from 0.125 Ω to 0.3 Ω. This low resistance allows the device to support high-current applications, such as those found in motor control or high-power switching applications, while still providing a good level of performance. Additionally, the device has very low input and output capacitances which allows it to operate at higher frequency switching applications, making it ideal for RF applications.
The FDMA1027PT is designed to be used as a two-channel device in applications where multiple FETs are needed. It is commonly used in power supplies, motor control, and high-speed signal switching applications. The device is also well suited for high-side operation due to the independent matching of each FET channel, enabling the device to be operated with a single supply. The FET-Tech process also allows it to switch at higher frequencies, making it ideal for high-frequency power conversion and RF switching applications. Overall, the FDMA1027PT is a robust and cost-effective solution for a variety of power management and switching applications.
The specific data is subject to PDF, and the above content is for reference
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