PDTD113EK,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3; MPAK
Base Part Number:	PDTD113

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PDTD113EK,115 application field and working principleThe PDTD113EK,115 is a low-power, high-speed, single NPN bipolar transistor with pre-biased technology. This transistor is designed for usage scenarios that require a high level of speed and switching power, such as audio applications, motor control and communication equipment.Bipolar Transistors Bipolar transistors are key components in electronics, used to amplify signals and switch power. They are three-terminal semiconductor devices with current flow between two of the terminals controlled by voltage applied to the third terminal. They are classified into two main types: NPN and PNP transistors, depending on the polarity of the input current. NPN transistors are the most commonly used type in electronics since they are generally easier to work with than PNP transistors.Single Bipolar Transistor Single bipolar transistors are one of the most basic types of transistors and consist of two diodes connected back-to-back. It is designed to conduct when the base is forward biased. This type of transistor is used for general purpose amplification and switching and can be found in many different electronic systems.Pre-Biased Single Bipolar TransistorThe PDTD113EK,115 is a pre-biased single bipolar transistor, which means it has a built-in bias voltage to help reduce the need for additional bias circuitry. This type of transistor is especially useful for audio applications and motor control since it can provide high speed switching and high power handling with fewer errors than traditional bipolar transistors.Working Principle The PDTD113EK,115 works by relying on the current gain of the device to switch between conducting and non-conducting states. When the base of the transistor is forward biased, current flows between the base and emitter, creating a base current. This base current creates a voltage drop between the collector and emitter, which controls the collector and emitter current, allowing it to switch between states. The pre-biased voltage provides the necessary biasing that helps to reduce the need for external circuitry. ConclusionThe PDTD113EK,115 is a high-speed, low-power single NPN pre-biased bipolar transistor with numerous applications in audio, motor control and communication systems. This type of transistor provides high speed switching and high power handling with fewer errors than traditional bipolar transistors and works by relying on the current gain of the device to switch between conducting and non-conducting states.

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