Allicdata Part #: | 2N7002BKS/ZLX-ND |
Manufacturer Part#: |
2N7002BKS/ZLX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2 N-CH 60V 300MA SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 300mA (Ta) 1.0... |
DataSheet: | 2N7002BKS/ZLX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
Power - Max: | 1.04W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2N7002BKS/ZLX Application Field and Working Principle
The 2N7002BKS/ZLX is a P-Channel MOSFET containing 8 transistors. It is a high-current device built on the latest semiconductor technology with an impressive reputation for reliability, performance and low power consumption. The 2N7002BKS/ZLX is ideally suited for use in applications that require high current handling with minimal power dissipation.
Application Field
The 2N7002BKS/ZLX is widely used in general-purpose switching applications, power management, and data communications. Due to its excellent current handling capability, it is widely used in DC-DC converters and switching power supplies. The device is also used in telecommunications equipment, automotive systems, computers and consumer electronics.
General Working Principle
A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) consists of a metal-oxide semiconductor connected to a gate electrode, forming a three-terminal device. The metal-oxide semiconductor (MOS) acts as an insulating layer and the gate electrode is used to control the conductivity of the device. When a voltage is applied to the gate, it creates an electric field that modulates the conductivity of the MOS and affects the flow of current through the MOSFET.
The 2N7002BKS/ZLX is a P-Channel MOSFET, meaning that current flows in the opposite direction to an N-Channel device. When the Gate Voltage (Vgs) is applied, the channel between source and drain is opened, and current flows through the channel. The current is regulated by the Gate Voltage (Vgs) – when the voltage is increased, the current flow increases and vice versa.
Advantages of the 2N7002BKS/ZLX
The 2N7002BKS/ZLX MOSFET has several advantages over other transistors. It has a low threshold voltage (Vth), meaning it takes less voltage to switch it ON and OFF. It also has a low ON resistance (Rdson) and a high current handling capability, meaning it can efficiently transfer large amounts of current with minimal power dissipation. Furthermore, it is ESD Protected, meaning it can handle large electrostatic discharges without damage.
Conclusion
The ability to efficiently switch large amounts of current, with low power dissipation and ESD Protection make the 2N7002BKS/ZLX an ideal choice for a variety of applications. It is widely used in power management and data communications, and is particularly useful in DC-DC converters and switching power supplies. It is a reliable and cost-effective device with excellent current handling capability and minimal power dissipation.
The specific data is subject to PDF, and the above content is for reference
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