2N7002DWQ-7-F Discrete Semiconductor Products

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2N7002DWQ-7-F is an single-channel enhancement mode Field Effect Transistor (FET) specifically designed with an array of 20 elements in one package.

The 2N7002DWQ-7-F is designed to be used in applications where superior ESD and latch-up immunity are needed. The array architecture can help reduce the number of components and simplify boards. Additionally, it provides low-cost solutions since all elements are monolithically integrated and share identical features, terminals, and gate biasing requirements.

Applications for the 2N7002DWQ-7-F include power management, motor control, Audio/Video systems, automotive, and industrial applications. The FET has proven itself useful in circuit designs for switching, voltage clamping, and level shifters. Switching applications require a fast turn-on/turn-off time, as well as a fast switching speed. The 2N7002DWQ-7-F is well equipped for these duties, with an output gate charge (Qg) of 350 pC and a gate-source capacitance (Cgs) of 24pF.

On the other hand, the 2N7002DWQ-7-F can be used in linear applications such as high-end audio, amplified speakers, or any voltage controlled application. It features a low on-state resistance (Ron) of 20Ω, which is essential for controlling low voltage, high current signals.

In terms of its working principle, the 2N7002DWQ-7-F is a N-channel enhancement mode MOSFET. This means that it requires a positive voltage applied to the Gate terminal for the FET to turn on. When this happens, current will flow between the Source and Drain terminals and an output voltage is produced.

The 2N7002DWQ-7-F has a breakdown voltage (VDSS) of 75V and can handle a drain-source voltage (VSS) up to 40V. Additionally, its maximum drain current (ID) is 120mA, with a maximum power dissipation (PD) of 390mW.

In conclusion, the 2N7002DWQ-7-F is an array FET specifically designed to provide superior ESD and latch-up immunity. It is ideal for applications where fast switching speeds and low on-state resistance are required. Its main operating characterstics include a breakdown voltage (VDSS) of 75V, a drain-source voltage (VSS) of 40V, a maximum drain current (ID) of 120mA, and a maximum power dissipation (PD) of 390mW.

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