Allicdata Part #: | 2N7002KT3G-ND |
Manufacturer Part#: |
2N7002KT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 320MA SOT-23 |
More Detail: | N-Channel 60V 320mA (Ta) 350mW (Ta) Surface Mount ... |
DataSheet: | 2N7002KT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24.5pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 320mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2N7002KT3G is a field effect transistor (FET) and part of the 2N7002KT3G Series of single FETs. This transistor is a small signal enhancement type and is designed for use in applications such as general purpose analog switching and amplification. The 2N7002KT3G has a maximum drain-source current of 200 mA, a maximum voltage (Vds) of 60 volts and an on-resistance (Rds) of 85 ohms. This part is also available in a low power version (2N7002KT1G) with a lower voltage rating of 28 volts and a higher on-resistance (Rds) of 150 ohms.
This transistor is manufactured in a variety of sizes and configurations, each having a distinct application. The available FETs have different maximum voltages and current ratings which can help to determine the appropriate part for each application. As such, the 2N7002KT3G is best suited for analog switching and amplification in low power applications. This part can also be used as an amplifier in low power linear applications.
The 2N7002KT3G is a Junction Field Effect Transistor (JFET) and operates by the same principle as a conventional Bipolar Junction Transistor (BJT). This transistor consists of two regions, the source and drain, which are connected to an insulated gate. The characteristics of the device are affected by the electric field created when a voltage is applied between the source and the gate. This in turn controls the resistance between the source and drain regions. The resistance through the channel is called its on-resistance (Rds) and is responsible for determining the amount of current that is able to be conducted.
In short, the 2N7002KT3G is a field-effect transistor (FET) designed for analog switching and amplification in low power applications. This part is manufactured to operate at high speeds and with a maximum drain-source current of 200 mA, a Vds of 60 volts, and an on-resistance of 85 ohms. As such, the 2N7002KT3G is best suited for small signal enhancement applications. In addition, the transistor can be used in low power linear applications as an amplifier.
The specific data is subject to PDF, and the above content is for reference
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