Allicdata Part #: | 2N7002DWH6327XTSA1TR-ND |
Manufacturer Part#: |
2N7002DWH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 60V 0.3A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 300mA 500mW Su... |
DataSheet: | 2N7002DWH6327XTSA1 Datasheet/PDF |
Quantity: | 3000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 300mA |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 20pF @ 25V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: | PG-SOT363-6 |
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The 2N7002DWH6327XTSA1 is part of a family of discrete FETs (Field Effect Transistors) intended for use as load switches, general-purpose switches, or for level shifting and level shifting applications, in addition to its primary use as a logic-level-shifting device. This device is known as an array of transistors, because it contains several FET transistors in a single package. These transistors are designed to work together, allowing them to switch power on and off quickly and with minimal power loss.
The basic function of the 2N7002DWH6327XTSA1 is to convert signals from one logic level to a different logic level. For example, this device might be used to take a 3.3V logic signal and convert it to 1.8V logic. It can also be used to switch the flow of power on and off in a circuit, and for level shifting, which is a technique for adapting the voltage of one logic device to the voltage of another logic device.
The 2N7002DWH6327XTSA1 consists of two FET transistors and a silicon diode, all contained in a small package, typically around 1.6 square millimeters in size. The two FET transistors, typically N-channel MOSFETs, are usually connected in series as a dual inline connection (DIP). The transistor in the package has one gate terminal that controls the flow of current, and two source and drain terminals that control the direction of current flow. The other part of the package, the silicon diode, is used as a protection circuit, helping to ensure that the device does not operate outside of its design parameters. This allows the device to operate safely and maximise efficiency.
The FETs contained in the 2N7002DWH6327XTSA1 have quite different characteristics from the typical n-channel MOSFET, and this has enabled the device to become very popular in many different applications. The gate of the device is connected to a gate driver circuit, which is used to turn the device on and off. This gate driver can be connected to virtually any logic level, allowing the device to be used in many different logic level applications. In addition, the high switching speeds of these FETs, helps to reduce power consumption in the circuit.
The 2N7002DWH6327XTSA1 is also well-suited for use as a level shifter. It allows a logic level to be shifted up or down, enabling the design of circuits that use different logic levels on the same chip. This allows the same chip to be used in multiple applications, while still achieving the same function. This device is particularly well-suited for use in low-voltage applications, where it can reduce power consumption and space compared to other level shifters.
The 2N7002DWH6327XTSA1 is an incredibly useful device, and because of its small size, power savings, and ease of use, it has become an incredibly popular FET for many different electronic projects. It is commonly used in level-shifting applications and power switching applications, and is also popular for use as an array of transistors, as it can contain multiple transistors in a small package. With its wide range of applications, and its popularity, the 2N7002DWH6327XTSA1 is sure to remain a popular FET for a long time to come.
The specific data is subject to PDF, and the above content is for reference
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