2SK2103T100 Discrete Semiconductor Products |
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Allicdata Part #: | 2SK2103T100TR-ND |
Manufacturer Part#: |
2SK2103T100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 2A SOT-89 |
More Detail: | N-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount MPT... |
DataSheet: | 2SK2103T100 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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2SK2103T100 is one of the most popular, versatile and highly efficient field-effect transistors (FETs) available on the market. This power MOSFET from Toshiba Semiconductor has become a favorite choice of many engineers. 2SK2103T100 is a single-gate N-channel type transistor employing an SO-8 (small outline) package. It is an ideal replacement for analog-switched MOSFET applications because of its low power consumption, wide input voltage range and simple gate drive configuration.
The 2SK2103T100 can be used in a wide range of applications, including automotive and industrial motor control, heating and ventilation systems, and signal processing. Its low gate-threshold voltage and high-current capability make it an ideal choice for controlling high-power applications. Additionally, the 2SK2103T100 features a low on-resistance, which enables fast switching from high-current to low-current applications.
2SK2103T100 works on the principle of field-effect transistor. A field-effect transistor, simply put, is one in which the electric field of a gate electrode modulates the conductivity of a channel between the source and drain electrodes. In a MOSFET, this conductivity is controlled by the voltage applied to the gate terminal. When the gate voltage is increased, the current through the channel (source to drain) increases, making the MOSFET an efficient way to control power in digital logic systems.
2SK2103T100 is designed and manufactured to provide superior performance. This device offers a wide range of input voltage, low threshold voltage, low on-resistance, and high-current capability. Its on-state current rating is 4A at 25°C, and its maximum drain-source breakdown voltage is 80V. Furthermore, 2SK2103T100 operates at temperatures between -55°C and 150°C, so it can be used in extreme environments.
2SK2103T100 is tolerant to electrostatic discharge (ESD). It has 1.5kV HBM (human body model) ESD protection and 500pF external protection against both MOSFET and output pin inputs, making it reliable and safe. Furthermore, the 2SK2103T100 also includes a simple but effective thermal protection system to protect against accidental thermal exposure.
In conclusion, the 2SK2103T100 is a highly efficient, versatile and reliable MOSFET, suitable for use in a wide range of applications. Its low power consumption, wide input voltage range, low threshold voltage and high-current capability make it an ideal choice for automotive and industrial motor control, heating and ventilation systems and signal processing. Additionally, its robust design and ESD protection features make it highly reliable and safe.
The specific data is subject to PDF, and the above content is for reference
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