![AOTF12T60L Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | AOTF12T60L-ND |
Manufacturer Part#: |
AOTF12T60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 12A TO220F |
More Detail: | N-Channel 600V 12A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1954pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOTF12T60L is a power MOSFET device that can be used in a variety of applications. This MOSFET is a n-channel field-effect transistor, with a low on-state resistance and a good turn-off speed. It is highly efficient and also has an excellent frequency response. The AOTF12T60L is suitable for DC-AC inverter applications and also for high-power switching, such as in motor control applications.
The AOTF12T60L is a single MOSFET-type device and is a four-terminal device, with the source, drain, gate and substrate connections all routed to the same head package. The drain and source terminals are linked to a metal-oxide semiconductor (MOS) film, which is the active layer for this particular MOSFET. The MOS film is usually composed of a silicon-dioxide layer and is typically surrounded by a thin metal gate. The gate is connected to the gate terminal and is responsible for controlling the flow of current.
The basic working principle of the AOTF12T60L is based on the structure of the MOS film, which is the active layer of the device. The drain and source terminals are the conductors that provide the charging and discharging of the MOS film in order to switch it on or off. When positive voltage is applied to the gate terminal, the electric field generated between the gate and the MOS film will attract mobile electrons and holes. The positive voltage will accumulate charge on the gate side of the MOS film, inducing an inversion layer that acts as a current path. Conversely, when the gate voltage is reduced, charge is discharged from both the gate side and MOS film side of the device, which switches the device off.
Due to its low on-state resistance and fast switching speed, the AOTF12T60L is a popular choice for various applications. It is often used in DC-AC inverter applications, as it can provide high and rapid switching. It is also utilized for a variety of motor control applications, especially for high power applications. In these applications, its fast switching speed and low on-state resistance ensure a reliable and efficient operation. It is also used in some high efficiency solar cell applications.
The AOTF12T60L is an ideal choice for various switching applications, as its design and construction provides a high level of efficiency and reliability. Its low on-state resistance and fast switching speed makes it a good choice for any application that needs a reliable, high-performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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