AOTF16N50_002 Allicdata Electronics
Allicdata Part #:

AOTF16N50_002-ND

Manufacturer Part#:

AOTF16N50_002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH TO220
More Detail: N-Channel
DataSheet: AOTF16N50_002 datasheetAOTF16N50_002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
Package / Case: --
Description

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AOTF16N50_002 is a single Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a type of field effect transistor (FET) which uses metal oxides to control the flow of current. The AOTF16N50_002 is designed for use in a wide variety of applications including power-supply and power management circuits, AC/DC converters, and high power switches. It offers an RDS(On) of 16 mΩ and excellent thermal performance with its low thermal resistance.

The AOTF16N50_002 offers a very low On resistance with a low gate threshold voltage, making it suitable for a variety of applications. It has a maximum drain current of 5A and a maximum drain-source voltage of 50V. The device is small and easy to integrate into various systems. Its low gate threshold voltage also makes it an ideal choice for controlling high power loads. The AOTF16N50_002 also offers excellent performance in power conversion applications. It is well suited for high frequency switching applications and is compatible with high peak current requirements.

In general, MOSFETs are a type of three-terminal semiconductor device, consisting of a source, a drain, and a gate. The gate is isolated from the source and the drain by a thin gate oxide layer. A voltage applied to the gate changes the strength of the electric field between the source and drain, allowing the device to amplify or switch signals. In the case of the AOTF16N50_002, the device operates in enhancement mode. This means that the MOSFET is in its non-conductive or “off” state until a positive voltage is applied to the gate. The higher the voltage on the gate, the lower the resistance between the source and drain, allowing more current to flow.

The AOTF16N50_002 has a low gate threshold voltage and requires only a very small gate voltage to turn on. This allows for a very efficient power conversion. The device also has a very low drain-source on resistance, allowing for lower power losses and higher efficiency. The low gate charge also helps reduce switching power losses. Due to its high current and voltage ratings, the AOTF16N50_002 can be used in a variety of applications including high power switches, DC-DC rectifiers and AC-DC converters.

The AOTF16N50_002 can also be used in high-power brushless DC motor control applications. In these applications, the device can be used as part of a PWM (Pulse Width Modulation) circuit. The device can act as a high-efficiency switch to provide precisely timed switching, allowing to the motor to accelerate or decelerate as required. The MOSFET can also be used in conjunction with the brushless DC control circuitry to provide efficient control of the motor speed and torque as well as protection against high current or voltage spikes.

Overall, the AOTF16N50_002 is an excellent choice for a variety of applications, offering superior performance in power conversion, high power switching, and motor control. Its low gate threshold voltage and RDS(On) make it suitable for any situation where an efficient, reliable, and cost-effective solution is needed.

The specific data is subject to PDF, and the above content is for reference

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