AOTF16N50

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AOTF16N50 is a type of vertical single N-channel enhancement-mode field effect transistor (FET) designed and manufactured by Alpha & Omega Semiconductor designed for cost-sensitive applications and medium-current power supplies.

This FET can be used in the typical applications that include amplifiers, switches and high-frequency power supplies. It is an excellent choice for PCBs where miniaturization is key, and its reasonable price helps keep production costs low. As one of Alpha & Omega Semiconductor’s typical products, the AOTF16N50 also offers a wide operating range. The transit frequency for the FET reaches up to 2GHz, allowing for high-end performance.

The AOTF16N50 FET offers very good Idss characteristics, allowing for a wider range of operation. The total Gate Charge (Qg) reaches a peak of 0.68nC. It is optimized for high-voltage operations of 60V, which helps reduce power consumption and increase efficiency. Meanwhile, this FET is able to withstand an avalanche current of 400mA and a DC drain-source voltage (Vds) of 200V.

Regarding the structure of AOTF16N50, it is constructed with N-channel-depleted Metal Oxide Semiconductor (MOSFET) technology combined with high-density gate dielectric. The device features high-switching speed, low input capacitance and low gate control voltage. It also features a low on-resistance, low thermal resistance and low drain-to-source capacitance. In addition, this FET offers very low gate charge for its size.

The working principle of the AOTF16N50 is based on the application of an electrical field between the gate and the body may produce either an accumulation or a depletion of charge on the body relative to the channel during the transfer of the majority carriers from the source to the drain region. The gate is highly insulated from the channel and the carriers can move freely between the source and the drain. When the FET is in the off state, there are no carriers in the channel. When a gate voltage is applied, the field cause a depletion of the channel, changing the level of the charge at the drain. The adjust of voltage on the gate will cause a variation of the net charge on the FET and a variation in current that flows through the channel.

In conclusion, AOTF16N50 is a cost-sensitive FET designed and manufactured by Alpha & Omega Semiconductor with a wide operating range and excellent performance characteristics. With a transit frequency of up to 2GHz, a high voltage of 60V and a high avalanche current of 400mA, the FET offers a great amount of power and performance in a very small size. Its reasonable price helps keep production costs low, making it an excellent choice for miniaturization projects. By understanding its working principle, users can maximize the performance of this FET for their specific applications.

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