Allicdata Part #: | AOTF22N50-ND |
Manufacturer Part#: |
AOTF22N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 22A TO220F |
More Detail: | N-Channel 500V 22A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF22N50 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3710pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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The AOTF22N50 is a 50V N-Channel MOSFET, which is normally used as a switch and is capable of high frequency operations. It specifically belongs to the category of Advanced Power MOSFET which helps in providing superior performance and low power drain in the same package. The AOTF22N50 is an advanced power MOSFET, which is especially designed to deliver superior performance and superior power efficiency, while remaining in a compact package size.
The AOTF22N50 has a number of useful applications in the industry. Some of these applications are as follows:
- It is useful for switching high-efficiency power amplifiers.
- It can be used in a number of high-frequency switching applications.
- It can be used as a high-efficiency, high-power switch in the power supply industry.
- It is also ideal for power management applications such as DC-DC converters.
The working principle of the AOTF22N50 power MOSFET is relatively simple and straightforward. It uses a heavy-duty triple-Diffused N-Channel MOSFET structure. This structure is composed of multiple layers of silicon, which are then diffusion doped. This is what helps the MOSFET to be able to switch high power signals with superior power efficiency and reliability. All these layers also facilitate improved temperature and voltage handling capabilities, resulting in superior operation.
The AOTF22N50 mainly works on the concept of a bi-polar transistor, which works by controlling a gate voltage. This gate voltage forms the gate-source voltage, which then allows the current to flow. The MOSFET then works by allowing voltage to flow between two terminals on the MOSFET body, just by altering the gate voltage. The AOTF22N50 also works by taking advantage of the enhanced doping of the outer layers of the MOSFET body, allowing it to handle high voltages and currents. It also takes advantage of the integrated Dynex (dual-channel) package, which allows for better performance, thermal characteristics, and reliability.
In summary, the AOTF22N50 is an advanced power MOSFET, which is designed to deliver superior performance and superior power efficiency, while being housed in a compact package size. It finds its use in numerous high-frequency switching applications like power amplifiers and in power management applications like DC-DC converters due to its superior performance and power efficiency. The working principle of the AOTF22N50 usage is relatively simple – by controlling the gate voltage and taking advantage of the advanced doping and integrated package, the device is capable of switching high power signals with superior power efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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