Allicdata Part #: | 785-1443-5-ND |
Manufacturer Part#: |
AOTF266L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 60V 18A TO220F |
More Detail: | N-Channel 60V 18A (Ta), 78A (Tc) 2.1W (Ta), 45.5W ... |
DataSheet: | AOTF266L Datasheet/PDF |
Quantity: | 411 |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 45.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5650pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 78A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOTF266L is a high voltage enhancement mode n-channel field effect transistor (FET) which is specially designed to suit the Smart Power IC applications like high speed switching, linear regulation, and low RDS(on). This FET has a trench gate structure which greatly enhances its switching performance. This product provides high drain to source breakdown voltage, fast switching speed and ultra low on-state resistance. The AOTF266L offers a wide range of features and benefits such as wide operating voltage range (2 to 36V), low total gate charge, adaptive body diode, high linearity control, and excellent avalanche characteristics.
The AOTF266L is a type of Field Effect Transistor (FET) which is designed to operate as a voltage-controlled switch when a voltage differential is applied between the gate and source. The structure of high voltage MOSFETs contain an insulated gate, instead of a conventional doped-semiconductor gate, which provides a larger gate area for electrical control and low leakage current. The AOTF266L is an n-channel device, meaning that its conduction (on-state) is driven by a pair of n-type source and drain regions within the device. The n-channel FET offers higher switching speed, greater efficiency and lower power dissipation than its p-channel counterparts.
When no gate voltage is applied to the FET, the channel between the drain and source pins will be electrically open. The electric field generated by the electric charge applied to the gate can open the channel to the drain pin, allowing current to flow. Once the charged gate is removed, the channel is closed again and the flow of current is stopped. This is known as the enhancement mode, which describes the mechanism by which the gate voltage raises the conductivity of the gate oxide.
By applying a certain amount of gate voltage to the FET, the gate\'s electric field conduction can be increased to a certain level that can generate an inversion effect to make the drain voltage higher than the source voltage. The device will then enter its saturation mode, whereby the drain current will remain constant as long as the source voltage is higher than the gate voltage. The device is then said to be "ON", and the voltage across the device is known as the drain saturation voltage.
The AOTF266L is widely used in power supplies, audio amplifiers and DC motors. It is widely used in Automotive Applications, like Engine Start/Stop systems, DC-DC converters, High Side Switching, Buck Converters and AC-DC converters. It is also widely used in Industrial Applications like Stepper Motor Controllers, Solar Inverters, Solid State Drives, DC-DC Converters and AC-DC Converters. The features and benefits offered by the AOTF266L transistor make it one of the most popular FETs available today.
The specific data is subject to PDF, and the above content is for reference
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