AOTF3N90 Allicdata Electronics
Allicdata Part #:

AOTF3N90-ND

Manufacturer Part#:

AOTF3N90

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 900V 2.4A TO220F
More Detail: N-Channel 900V 2.4A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: AOTF3N90 datasheetAOTF3N90 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.7 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOTF3N90 is a field-effect transistor (FET) that belongs to the MOSFET (metal-oxide semiconductor FET) type of transistor. It is a single FET device that is used as an amplifier and switch in integrated circuits (ICs) and other electrical systems.
AOTF3N90 is a high-power, fast switching device and is suitable for applications such as high-speed power control, radio frequency (RF) switching, and current measurement. It is often used in DC-DC conversion for efficient energy conversion. The AOTF3N90 has low on resistance, fast switching characteristics, and high-frequency operation capability and is considered to be a highly reliable device.
The working principle of AOTF3N90 is based on the principle of electron charge transfer. The device is made up of a source, gate and drain, where the source and drain are connected by a channel. When a voltage is applied to the gate, the threshold voltage for the channel is reduced, allowing the flow of electron charges through the channel. This results in current conduction between the source and drain. The channel conducts a small amount of current when the voltage applied to the gate is low, and a larger amount of current when the voltage is higher. The amount of current is controlled by adjusting the applied gate voltage.
AOTF3N90 has a wide range of applications in various industries and systems. It is widely used in power amplifier circuits as it is capable of operating at high frequencies and providing high power efficiency. It is also commonly used in switching circuits, such as in television sets and other consumer electronics. It is also used in RF switches, LED backlight drivers, and solar energy inverters. In addition, AOTF3N90 is used in various medical devices for accurate measurement of current, pressure and temperature.
AOTF3N90 is capable of high-speed switching operation at low temperatures and offers excellent thermal performance. The device is designed for operation under extreme temperature, humidity, and pressure conditions. Additionally, the device is designed for easy installation and can be easily incorporated into existing systems. Additionally, the device is available in various packages, such as SO-8, TO-252, and SOT-323, to meet the requirements of different applications.AOTF3N90 is a highly reliable, efficient and cost-effective device and is suitable for a wide range of applications. With the ability to control current conduction through the gate voltage, the device is highly reliable and offers excellent performance in applications where accuracy and speed are important factors. The device is also cost-effective and can be easily incorporated into existing systems. Overall, AOTF3N90 is a reliable and cost-effective solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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