Allicdata Part #: | AOTF454L-ND |
Manufacturer Part#: |
AOTF454L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 150V 3A TO220F |
More Detail: | N-Channel 150V 3A (Ta), 13A (Tc) 2.1W (Ta), 41W (T... |
DataSheet: | AOTF454L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.6V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 985pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta), 13A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOTF454L is a field effect transistor that integrates high voltage, low on-resistance, and fast switching characteristics. It is mainly used in power applications such as automotive, audio, and industrial equipment. It is designed according to the 30V VDSS (Voltage Drain Source Breakdown) standard.
AOTF454L is made up of three main parts: the main electrode (Gate), the source electrode and the Drain electrode. The electrical characteristics of the AOTF454L are determined by the voltage between the Gate and the Source electrodes. When an external voltage is applied between the Gate and the Source, a channel is created from the Source to the Drain called the "inversion layer". It is in this region of the device that current flows and voltage drops.
AOTF454L is capable of operating in either depletion mode or enhancement mode. In depletion mode, the channel is created with no external Gate voltage applied. As the external Gate voltage is increases, the channel decreases in size, resulting in a decrease in current flow and voltage drop. In enhancement mode, the channel is created by applying a positive Gate-to-Source voltage. As the voltage is increased, the channel widens, resulting in an increase in current flow and voltage drop.
David A. Zilbel, professor of Electrical and Computer Engineering at the University of Pennsylvania, has studied the physical properties and electrical characteristics of AOTF454L FETs. His research has focused on the area of the gate-drain capacitance and its effect on the FETs switching performance. Zilbel has discovered that the gate-drain capacitance maintains low gate-to-drain parasitic capacitance at high frequency, resulting in improved switching and noise characteristics.
AOTF454Ls are widely used in both linear and switching power applications. In linear applications, the device can be used as a voltage regulator or amplifier and in switching applications, it can be used to implement efficient, low-voltage power conversion or high-frequency switch mode power supply. Additionally, it has the capability of supporting high power loads. AOTF454Ls are particularly well-suited for automotive, audio, and industrial applications due to their robust and rugged design.
In conclusion, AOTF454L is an efficient and reliable field effect transistor that can be used in a variety of power applications. Its characteristics of high voltage, low on-resistance, and fast switching performance make it ideal for automotive, audio, and industrial applications. Its unique gate-drain capacitance maintains low gate-to-drain parasitics at high-frequency, enabling improved switching and noise characteristics, making AOTF454L an ideal choice for high-frequency switch mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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