AOTF8T50PL Allicdata Electronics
Allicdata Part #:

AOTF8T50PL-ND

Manufacturer Part#:

AOTF8T50PL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V TO220F
More Detail: N-Channel 500V 8A (Tc) 28W (Tc) Through Hole TO-22...
DataSheet: AOTF8T50PL datasheetAOTF8T50PL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 100V
Vgs (Max): ±30V
Series: --
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 810 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Description

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AOTF8T50PL is a type of Field-Effect Transistor (FET). It is a single-gate MOSFET which has the ability to function as the main device within systems to transfer and block electric current. The main purpose of this device is for low voltage applications, although its usage varies across different applications.

AOTF8T50PL is a vertical pin structure MOSFET with an eight-pin package, reportedly enabling space-saving mounting in electronic systems, as well as low on-resistance that enables low power loss and fewer temperature rises in power supply circuits.

It is also a P channel FET, meaning that conduction is enabled by positive gate voltage, and a short circuit can be applied between power and ground to reduce the potential of sinking current. It has an off current of 1 microamperes and an on-resistance of 0.5 ohms.

Because of this, it is commonly used for high side switching in automotive applications, board level power supplies, DC motor drives, and small logic-level switching. Such applications require higher current rating with low voltage, making AOTF8T50PLs an ideal choice.

The working principle of an AOTF8T50PL is the same as all the other FETs. When the gate voltage rises above a certain level, the drain current starts flowing through the transistor. This happens because of the direct relationship between the gate and the drain which allows for the switching off and on of the current. The higher the voltage, the more current is allowed to flow through.

When the gate voltage is very small, the positive charge carriers (holes) accumulate at the interface between the gate and the channel. This attracts the majority carriers (electrons) towards the gate, which creates an electric field and thus changes the voltage across the transistor. This causes conduction and maintains the current across the drain and source.

The amount of current through the transistor is primarily determined by the channel geometry, the channel doping, and the applied gate voltage. The gate voltage has the most significant effect on the conduction through the transistor as it has an exponential relationship with current.

AOTF8T50PLs are used in a wide variety of applications and are especially useful for mobile devices, as they often require a low gate voltage to function properly. They are also useful for digital circuits as they do not require complex circuitry to operate and can easily switch on and off at low voltages.

In conclusion, AOTF8T50PL is a type of single-gate MOSFET that can be used for a variety of applications. It is a vertical pin package with a low on-resistance that enables low power dissipation. It is well suited for high side switching in automotive applications, board level power supplies, DC motor drives and small logic-level switching. It enables conduction of electricity by controlling the gate voltage, and its current is determined by the channel geometry, doping, and applied gate voltage.

The specific data is subject to PDF, and the above content is for reference

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