AOTF9N70 Allicdata Electronics
Allicdata Part #:

AOTF9N70-ND

Manufacturer Part#:

AOTF9N70

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 700V 9A TO220F
More Detail: N-Channel 700V 9A (Tc) 50W (Tc) Through Hole TO-22...
DataSheet: AOTF9N70 datasheetAOTF9N70 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOTF9N70 is a single-gate N-channel MOSFET which is a type of transistor, along with BJT and FET. It is designed for low-level analog and digital (OLB and D-MOS) applications, and represents an advance in technology, thanks to its small die size and low on-state resistance.

AOTF9N70 includes a gate, drain, and source regions. The gate is the key control element, which is connected to the rest of the circuit with a Gate Oxide Layer (GOL). When an adequate electrical signal is applied to the gate, it induces an electric field in the silicon substrate below the GOL. The field causes an electric current to flow through the device, resulting in a desired effect.

In the case of AOTF9N70, the current has two dominant flow directions in the form of a channel between the source and drain. The flow of current is controlled by the channel whose parameters such as channel width and length can be modified as desired.

The main application fields of AOTF9N70 include low-power analog and low-voltage digital circuits, such as memory and gate array chips. It is particularly suitable for applications with low leakage operation, such as high density power management circuits. In addition, it is also used in wireless communication, motor control, and automotive systems, where low on-resistance and minimal power dissipation are important considerations.

AOTF9N70 is also used in input buffer, level shifter, latch, switch, and power supply circuit. In such applications, the device needs to control the voltage in the N-channel region, either by operating its gate voltage or the voltage applied to its drain terminal. It is also used in current mirroring and cascode circuits, where its N-channel helps in matching the output of one stage to the next stage.

For digital applications, AOTF9N70 is used to switch between logic high and logic low states, providing a logic level control. It is also used in amplifiers, where its small die size provides lower capacitive loading, thus allowing for higher transimpedance. Another important application of AOTF9N70 is in high-speed switching applications, such as those used for Ethernet and LANs.

In conclusion, AOTF9N70 is a single-gate N-channel MOSFET that has various applications in low-level analog and digital applications. It is highly desirable for its small die size and low on-state resistance, and provides an effective way to control the flow of current in low-power, low-voltage electronic circuits. In addition, it also has applications in high-speed switching, power supply circuits, and amplifier circuits.

The specific data is subject to PDF, and the above content is for reference

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