Allicdata Part #: | APTM08TDUM04PG-ND |
Manufacturer Part#: |
APTM08TDUM04PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 6N-CH 75V 120A SP6-P |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 75V 120A... |
DataSheet: | APTM08TDUM04PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 120A |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 153nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4530pF @ 25V |
Power - Max: | 138W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6-P |
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APTM08TDUM04PG is an array of partially depleted content-addressable memory (CAM) transistors. It is primarily used in telecommunications, automotive electronics, consumer appliances, robotics and automation, and computer systems. The APTM08TDUM04PG array consists of 4 transistors with a total of 4 gates (therefore, 4 transistors in the array). Each transistor has separate gates for source to drain and drain to source (S-D and D-S).
The working principle behind APTM08TDUM04PG array transistors is to create parallel circuits for data storage. When a signal is sent to the array, each individual transistor can store different bits of information. Because the transistors are connected in parallel, as long as one transistor has received a signal, the others can also access that information. This provides an efficient way of data storage.
This combination of transistors in an array allows for high speed operation and low power dissipation. The array can handle higher speeds than traditional transistors due to the parallel configuration, which increases the number of transistors available to transport data. Furthermore, the transistors\' low power dissipation allows them to be used in portable electronic devices, such as smartphones or tablets. The low power dissipation also helps reduce the overall size of the array, making it suitable for use in smaller devices.
The APTM08TDUM04PG array transistors are also highly reliable. The use of partially depleted transistors makes them resistant to voltage drop, enabling them to withstand higher voltages. Additionally, the use of the array enables better heat dissipation, protecting the transistors from failure due to heat buildup. This reliability makes the APTM08TDUM04PG array transistors ideal for applications where reliability is essential, such as automotive and medical applications.
The APTM08TDUM04PG array transistors are also flexible, which makes them suitable for use in a wide range of applications. They can be used as a substitute for regular transistors in a variety of applications, such as communications systems, automotive electronics, consumer products, computer systems and robotics. Furthermore, they can be combined into different configurations, allowing users to customize the array to suit their specific requirements.
To sum up, the APTM08TDUM04PG array of transistors is an efficient and reliable solution for data storage. It is highly suitable for use in applications such as communications systems, automotive electronics, consumer products, computer systems and robotics. Additionally, the flexibility of the array transistors allows it to be customized for different applications, making it a great choice for designers.
The specific data is subject to PDF, and the above content is for reference
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