APTM100DAM90G Allicdata Electronics
Allicdata Part #:

APTM100DAM90G-ND

Manufacturer Part#:

APTM100DAM90G

Price: $ 85.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 78A SP6
More Detail: N-Channel 1000V 78A (Tc) 1250W (Tc) Chassis Mount ...
DataSheet: APTM100DAM90G datasheetAPTM100DAM90G Datasheet/PDF
Quantity: 1000
100 +: $ 77.66290
Stock 1000Can Ship Immediately
$ 85.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 10mA
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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APTM100DAM90G is a single-line field-effect transistor (FET) manufactured by Panasonic. The APTM100DAM90G is an N-channel MOSFET transistor with a drain-to-source breakdown voltage of 100 V, with a drain current of 110 A. The maximum power dissipation (12 W) and maximum junction temperature (150 degrees C) make the APTM100DAM90G suitable for use in harsh environments.

FETs can be used in circuits that require along-lived, high speed control of current over a wide range of load conditions. FETs are used to couple the power source to the load, while allowing the load current to be regulated. This is typically accomplished by controlling the FET drain voltage or the gate voltage.

MOSFETs are commonly used for low-level signal control in modern integrated circuits. They can be used for switching the signal between high and low levels and for amplifying it. MOSFETs are also used for high-speed switching applications in power electronics. Power MOSFETs, like the APTM100DAM90G, have a much higher power handling capacity than signal MOSFETs and are used in power circuits to control large amounts of current. The APTM100DAM90G is designed for use as a power amplifier in a variety of applications.

The working principle of a MOSFET is based on the capacitive coupling between the gate and the channel region. When a voltage is applied to the gate, a electric field forms which in turn causes a change of the carrier concentration in the channel region. This change of the carrier concentration modifies the resistance between the source and the drain and thus controls the amount of current flowing through it.

The APTM100DAM90G is a suitable choice for high speed switching applications, where it is necessary to control the current with high accuracy over a wide range of load conditions. The high power ratings make the APTM100DAM90G suitable for use in harsh environments, where it is necessary to drive high currents or high voltage loads. Because of its low forward voltage drop, the APTM100DAM90G can be used for efficient power conversion.

The specific data is subject to PDF, and the above content is for reference

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