Allicdata Part #: | APTM100H45STG-ND |
Manufacturer Part#: |
APTM100H45STG |
Price: | $ 97.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 1000V 18A SP4 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18... |
DataSheet: | APTM100H45STG Datasheet/PDF |
Quantity: | 8 |
1 +: | $ 88.28190 |
10 +: | $ 82.50970 |
25 +: | $ 79.62430 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: | 18A |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 154nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 25V |
Power - Max: | 357W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTM100H45STG is a transistor array that usually used in high frequency and high speed applications such as H-Bridge circuit switching. It is a multi-channel MOSFET for power switch applications with a low on-resistance obtained by using advanced trench technology. It has low gate charge, fast switching, and increased reliability for high power switching applications such as motor control and power supplies.
The structure of the APTM100H45STG is based on MOSFET. It uses metal-oxide-semiconductor field effect transistor (MOSFET) transistors that have a metal gate on silicon channel. This provides the advantage of high input impedance, low output impedance, wide voltage gain, and low power consumption. The metal gate allows low power requirements and also efficient switching.
The APTM100H45STG application fields are mostly in power electronic systems that require efficient high-speed, low power conversion circuitry. It is ideal for inverter, H-bridge, and DC-DC convertor applications. It is also widely used in automotive electronics, power converters, and DC motor drives.
The working principle of the APTM100H45STG is based on the use of MOSFETs. It works by using a voltage on the gate terminal of the MOSFET, which is proportional to the voltage on the source side. When the voltage on the source side is changed, the gate voltage of the MOSFET will also change, thus allowing current to flow from the source to the drain. The MOSFET will remain in the on state until the gate voltage is increased, reducing the current flow.
In conclusion, the APTM100H45STG is an effective and efficient transistor array that is used especially in power electronic systems. The application fields are mostly in power electronic systems, automotive electronics, and DC motor drives. Thanks to its advanced trench technology, it can provide low on-resistance and low power consumption and is highly reliable in high power switching applications. The APTM100H45STG works by using a voltage on the gate terminal of the MOSFET which allows current to flow from the source to the drain.
The specific data is subject to PDF, and the above content is for reference
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