APTM100H45STG Allicdata Electronics
Allicdata Part #:

APTM100H45STG-ND

Manufacturer Part#:

APTM100H45STG

Price: $ 97.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 1000V 18A SP4
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18...
DataSheet: APTM100H45STG datasheetAPTM100H45STG Datasheet/PDF
Quantity: 8
1 +: $ 88.28190
10 +: $ 82.50970
25 +: $ 79.62430
Stock 8Can Ship Immediately
$ 97.11
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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The APTM100H45STG is a transistor array that usually used in high frequency and high speed applications such as H-Bridge circuit switching. It is a multi-channel MOSFET for power switch applications with a low on-resistance obtained by using advanced trench technology. It has low gate charge, fast switching, and increased reliability for high power switching applications such as motor control and power supplies.

The structure of the APTM100H45STG is based on MOSFET. It uses metal-oxide-semiconductor field effect transistor (MOSFET) transistors that have a metal gate on silicon channel. This provides the advantage of high input impedance, low output impedance, wide voltage gain, and low power consumption. The metal gate allows low power requirements and also efficient switching.

The APTM100H45STG application fields are mostly in power electronic systems that require efficient high-speed, low power conversion circuitry. It is ideal for inverter, H-bridge, and DC-DC convertor applications. It is also widely used in automotive electronics, power converters, and DC motor drives.

The working principle of the APTM100H45STG is based on the use of MOSFETs. It works by using a voltage on the gate terminal of the MOSFET, which is proportional to the voltage on the source side. When the voltage on the source side is changed, the gate voltage of the MOSFET will also change, thus allowing current to flow from the source to the drain. The MOSFET will remain in the on state until the gate voltage is increased, reducing the current flow.

In conclusion, the APTM100H45STG is an effective and efficient transistor array that is used especially in power electronic systems. The application fields are mostly in power electronic systems, automotive electronics, and DC motor drives. Thanks to its advanced trench technology, it can provide low on-resistance and low power consumption and is highly reliable in high power switching applications. The APTM100H45STG works by using a voltage on the gate terminal of the MOSFET which allows current to flow from the source to the drain.

The specific data is subject to PDF, and the above content is for reference

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