APTM10SKM02G Allicdata Electronics
Allicdata Part #:

APTM10SKM02G-ND

Manufacturer Part#:

APTM10SKM02G

Price: $ 77.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 100V 495A SP6
More Detail: N-Channel 100V 495A (Tc) 1250W (Tc) Chassis Mount ...
DataSheet: APTM10SKM02G datasheetAPTM10SKM02G Datasheet/PDF
Quantity: 1000
100 +: $ 70.84280
Stock 1000Can Ship Immediately
$ 77.93
Specifications
Vgs(th) (Max) @ Id: 4V @ 10mA
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The APTM10SKM02G is a type of field-effect transistor (FET) that falls within the single metal oxide semiconductor FET (MOSFET) family. It is a type of insulated-gate FET that was designed for switching or amplifying signals. This type is a power MOSFET, which means it is typically used for load switching, power amplifier applications, and power conversion. It has a maximum drain-source voltage rating of 10 V and a maximum drain current rating of 100 mA.

The FET can easily be identified by its part number, which is typically made up of a series of letters and digits. The first two letters (AP) usually signify the type of component; in this case, it is an insulated-gate FET. The next three digits (TM10) generally refer to the type of device. In this case, it is a MOSFET. The fourth letter, S, usually indicates the technology used to create the device. The final three digits (SKM02G) are typically used to refer to the version, or variant, of the device.

This FET is constructed with a drain, a source, and a gate. It is a three-terminal device with one source, one drain, and one gate. It is a unipolar device, meaning it conducts using only one type of charge carrier, as opposed to two types of charge carriers like a bipolar transistor uses. The gate terminal is used to control the flow of current across the channel between the source and drain terminals. The device is operated by applying a voltage to the gate terminal and the device will conduct or switch on in response to the applied voltage.

The APTM10SKM02G is usually used in switching applications, where the power being switched is relatively low. It is typically found in appliances, toys, and handheld electronics, where its ability to switch low voltages effectively and reliably make it suitable for such application. Its low power dissipation and low gate drive current requirements make it a popular choice for these types of switching applications.

The APTM10SKM02G is also suitable for use in amplifier applications. It can offer low-noise and high-gain performance as well as high input impedance, allowing it to amplify low-level signals without introducing unwanted noise. This makes it suitable for audio applications, where it can be used to build preamplifiers, amplifiers, and audio signal processing circuitry.

Finally, the APTM10SKM02G is also suitable for use in power conversion applications. It can be used to easily and efficiently convert power, such as converting AC to DC power by using a switch mode power supply. It is also capable of handling more power than a normal FET can, so it can be used in high-power applications.

In conclusion, the APTM10SKM02G is a type of insulated-gate FET that is typically used in switching, amplifier, and power conversion applications. It has a low power dissipation and low gate drive current requirements, making it suitable for use in low-power applications. It is also suitable for use in audio applications, where it can be used for preamplification, amplification, and audio signal processing. Additionally, its ability to handle larger currents makes it suitable for use in high-power applications as well.

The specific data is subject to PDF, and the above content is for reference

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