Allicdata Part #: | APTM50SKM38TG-ND |
Manufacturer Part#: |
APTM50SKM38TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 90A SP4 |
More Detail: | N-Channel 500V 90A (Tc) 694W (Tc) Chassis Mount SP... |
DataSheet: | APTM50SKM38TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 694W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 246nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APTM50SKM38TG is a single junction field-effect transistor (FET) that is used in a variety of applications including sensitive-low-noise amplifiers, power conversion equipment and motor control. It provides maximum junction temperatures of up to 250°C, low on-resistances, high input capacitance, and low gate charge. It also offers very high frequency and power densities. This article discusses the application field and working principle of APTM50SKM38TG.
The APTM50SKM38TG is able to provide superior performance in various types of applications because of its low on-resistance and high input capacitance. It is mainly used in sensitive-low-noise amplifiers, circuits which require high levels of precision and repeatability, and power conversion equipment. It is also used in motor control applications due to its superior switching times and very low gate charge.
The device has a maximum junction temperature rating of 250°C and is designed with a built-in temperature monitor that can trip and shut down the device in the event of an over-temperature condition. This safety feature helps protect the device from long-term damage. The device also features high-frequency current-handling capabilities and high-power densities.
The APTM50SKM38TG has three terminals: source, gate, and drain. The source and drain terminals connect the device to the external circuit, while the gate terminal is used to control the FET. When a voltage is applied to the gate, the FET conducts current between the source and drain. The amount of current is controlled by the voltage applied to the gate.
The working principle of a FET is similar to that of a conventional transistor. The device has two p-n junctions: a source-drain junction and a gate-drain junction. When a voltage is applied to the gate, a field is created that attracts electrons from the source and drains them through the drain. This creates a path for the current to flow between the source and the drain.
The major advantage of using a FET over a conventional transistor is that it has a very low input capacitance and voltage required to turn it on and off. This significantly reduces switching losses, allowing for higher frequency and power densities. Additionally, FETs are immune to electrostatic discharge, which makes them more suitable for use in electronic devices that require greater protection.
In summary, the APTM50SKM38TG is a single junction field-effect transistor (FET) that is used in a variety of applications including sensitive-low-noise amplifiers, power conversion equipment and motor control. It has a maximum junction temperature of 250°C and features high-frequency current-handling capabilities and high-power densities. Additionally, it has a low input capacitance and voltage required to turn it on and off, which provides excellent performance. The device is relatively simple to use, with all three terminals connecting to the external circuit. When a voltage is applied to the gate terminal, the FET will either conduct or block the flow of current according to the voltage level at the gate.
The specific data is subject to PDF, and the above content is for reference
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