APTM100A13SG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APTM100A13SG is a part of the Arrays family of transistors and field-effect transistors (FETs), specifically a metal-oxide-semiconductor FET (MOSFET). This device utilizes a small gate voltage to regulate large currents, making it ideal for applications such as motor drive switching, power management, and high-frequency power amplifiers. With its compact size and low profile, the APTM100A13SG is perfect for tight space applications with limited power requirements.

The APTM100A13SG is comprised of two separate p-channel electrodes that correspond to the source and drain electrodes in a standard n-channel MOSFET. A central gate electrode splits the two p-channels, controlling the flow of current when there is a voltage applied across the device. When no voltage is present, there is no current flow. The APTM100A13SG also features a low threshold voltage, allowing for excellent switching speed even when low voltage is used to control the flow of current.

In a typical circuit application, the APTM100A13SG is used as a voltage-controlled switch. When the gate terminal is held at ground potential and voltage is applied to the source and drain, current is allowed to flow between the two terminals. The amount of current allowed to pass through the device is proportional to the voltage applied across the source and drain, making it ideal for controlling the speed of motors and other current-dependent applications.

The switching speed of the APTM100A13SG is determined in part by the size of the gates, which can range from 0.2 to 1.0 microns. The device is also able to handle large currents up to 48A, making it ideal for power management applications. Furthermore, the APTM100A13SG offers an efficient power transfer due to its low on-resistance, making it optimal for applications requiring high operating frequencies such as switching power converters and inverters.

The APTM100A13SG is further enhanced by the presence of a second gate, marked as the “B” gate. This gate is primarily used to control the body voltage, which is the voltage between the source and gate of the MOSFET. By controlling the body voltage, the device’s on-resistance can be modified, allowing for improved power delivery and less power being consumed when in the off-state.

The APTM100A13SG is well-suited for a variety of applications that require low voltage, fast switching and power management, making it an excellent choice for designers looking for an effective and flexible power switch. With its low threshold voltage and high current handling capabilities, the APTM100A13SG is ideal for motor drive switching, power management, and high-frequency amplifiers.

The specific data is subject to PDF, and the above content is for reference