Allicdata Part #: | APTM20DAM10TG-ND |
Manufacturer Part#: |
APTM20DAM10TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V 175A SP4 |
More Detail: | N-Channel 200V 175A (Tc) 694W (Tc) Chassis Mount S... |
DataSheet: | APTM20DAM10TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 694W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 224nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 87.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 175A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APTM20DAM10TG is a type of single specific power field effect transistor (FET) manufactured by STMicroelectronics to provide MOSFETs. It is designed to be used in a wide range of applications, including robotic systems, power supplies, and motors. In this article, we will discuss the application field and working principle of the APTM20DAM10TG.
The application field of the APTM20DAM10TG is broad. It is typically used in power supplies, motor controllers, and servos. It is suitable for use in three-phase brushless DC (BLDC) motors, brushed DC (BDC) motors, stepper motors, and other applications with high-voltages and load currents. It can also be used in robotic systems, medical equipment, and any other situation that requires precise control over the power of the device.
The working principle of the APTM20DAM10TG is based on the use of Intel\'s advanced low-power electrical MOSFET technology. This technology has been designed to provide high performance and energy efficiency while also reducing the power consumption of the device.
The APTM20DAM10TG consists of four insulated gates and source-drain electrodes. The gates are designed to be connected to a control source, such as the processor, while the source and drain electrodes are used to control the current and voltage supplied to the device. The transistor has a voltage rating of up to 20V and a current rating of up to 10A.
The MOSFET technology used in the APTM20DAM10TG is designed to reduce switching losses by minimizing the voltage level and increasing the current level. This reduces the power consumption of the device, allowing it to be used in power-sensitive applications.
The APTM20DAM10TG is also designed with a built-in temperature monitor to protect the device from overheating. This ensures that the device is safe from damage due to excessive heat.
The APTM20DAM10TG is a versatile power FET and is suitable for a variety of applications. It is designed for high current and voltage applications and can be used in robotic systems, power supplies, medical equipment, and any other situation that requires precise control over the power of the device. With its advanced low-power electrical MOSFET technology, the APTM20DAM10TG reduces switching losses, increases energy efficiency, and minimizes power consumption. The built-in temperature monitor also provides extra protection and ensures that the device is safe from damage due to excessive heat.
The specific data is subject to PDF, and the above content is for reference
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