APTM100VDA35T3G Allicdata Electronics
Allicdata Part #:

APTM100VDA35T3G-ND

Manufacturer Part#:

APTM100VDA35T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1000V 22A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) 1000V (1kV) 22A 39...
DataSheet: APTM100VDA35T3G datasheetAPTM100VDA35T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: POWER MOS 7®
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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The APTM100VDA35T3G is an array of high-density power N-Channel enhancement mode MOSFETs. This type of MOSFET incorporates low on-resistance performance and low gate charge, allowing for superior switching capability in a wide range of current ratings. Additionally its fast switching speeds, simple gate structure, and high-temperature capability make it ideal for switching applications such as high-frequency AC or DC to DC conversion, boost converters, and smps.

The APTM100VDA35T3G features a surface-mountable ultra-thin package that is designed to reduce footprint and power dissipation while providing excellent reliability and performance. This makes it suitable for high-frequency switching applications in a variety of applications from portable electronics to power management devices, making it extremely versatile.

The APTM100VDA35T3G utilizes an advanced optimization process to improve power efficiency. This includes advanced low gate charge technology, low RDSon characteristics, and a unique package design which distributes the heat more effectively. Additionally, this power MOSFET includes integrated ESD protection and built-in gate protection to protect the device from electrical surges and other transient events. All of these features combined make this device highly reliable and suitable for a wide variety of applications.

The working principle behind the APTM100VDA35T3G is based on the MOSFET’s ability to conduct electrical current when there is a voltage differential between its source and drain. This means that when there is an input voltage applied to the gate, the device acts as an electrical switch and allows current to flow from the source to the drain. This action is controlled by the input voltage and the output current is controlled by the drain voltage. The APTM100VDA35T3G is also able to handle high voltages since it is optimized for high frequency applications and features an integrated ESD protection.

With its high-density power N-Channel enhancement mode MOSFETs, low on-resistance performance, low gate charge, and integrated ESD protection, the APTM100VDA35T3G is a versatile device suitable for a wide range of applications. Its surface-mountable ultra-thin package design provides excellent reliability and performance while its optimization process helps improve power efficiency.

The specific data is subject to PDF, and the above content is for reference

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