| Allicdata Part #: | APTMC120AM55CT1AG-ND |
| Manufacturer Part#: |
APTMC120AM55CT1AG |
| Price: | $ 149.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET 2N-CH 1200V 55A SP1 |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2k... |
| DataSheet: | APTMC120AM55CT1AG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 136.33200 |
| 10 +: | $ 129.75000 |
| 25 +: | $ 125.04900 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 55A |
| Rds On (Max) @ Id, Vgs: | 49 mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id: | 2.2V @ 2mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 1000V |
| Power - Max: | 250W |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP1 |
| Supplier Device Package: | SP1 |
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The device type APTMC120AM55CT1AG is a compound series of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) arrays, it has a single MOSFET embedded in one package, including the three Total Number of Power MOSFETs, controls and gate-source resistors. This device is known for its low power, high switching speed and high output impedance, creating an easier solution for application into a power management system.
The APTMC120AM55CT1AG device is mainly used in portable and battery-powered applications, such as power supply, battery chargers, DC-DC convertors, and high-efficiency LED drivers. It provides a stable operation with no-heat design and simplifies design process with less components required. In addition, its versatile control pins offer multiple enabling/disabling functions and provide the ability to switch up to 55V with a maximum on-state resistance of 120mΩ.
The working principle of the device can be split into three distinct parts: the collector-emitter voltage, gate-source voltage, and on-resistance. When applying voltage across the collector-emitter of the device, the electrons will emit from the dielectric layer and jump toward the collector. This creates a channel of electrons between the source and the drain, thus allowing the device to "start" its operation. By applying the appropriate gate-source voltage, the device can start to conduct by launching electrons from the gate towards the channel. This allows for voltage control of the device to adjust its current output. Finally, the on-resistance of the device can be controlled by adjusting the gate voltage to control the current output from the source to the drain.
The APTMC120AM55CT1AG device provides high-speed switching, low power consumption and high-output impedance for a multitude of portable and battery-powered applications. With the three on-board MOSFETs and flexible sizes, the device provides an easier and more efficient solution for power management systems. Its multiple control pins can provide enabling, disabling and voltage control functions, allowing the user to switch up to 55V with a maximum on-resistance of 120mΩ.
The specific data is subject to PDF, and the above content is for reference
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APTMC120AM55CT1AG Datasheet/PDF