APTM50DHM35G Allicdata Electronics
Allicdata Part #:

APTM50DHM35G-ND

Manufacturer Part#:

APTM50DHM35G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 500V 99A SP6
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 500V ...
DataSheet: APTM50DHM35G datasheetAPTM50DHM35G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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The APTM50DHM35G is a type of power transistor, classified as a field-effect transistor (FET) array. Specifically, it is an N-channel, high-power MOSFET, meaning it is capable of providing superior switching and amplifying performance. The APTM50DHM35G is widely used in industrial applications due to its low on-resistance, high switching speed, and wide input/output range. It is well-suited for AC, DC, and pulsed operation, allowing for excellent flexibility and compatibility in a variety of application settings.

FETs are an important component of modern electronics. They are used to control current flow in circuits, thus providing both better performance and improved energy efficiency. FETs operate on the principle of current modulation, whereby an applied voltage is used to regulate the amount of current being passed through the device. To accomplish this, the FET utilizes a semiconductor channel, which can be opened or closed depending on the voltage applied to the device.

The APTM50DHM35G is an array of power MOSFETs, meaning it is capable of handling unusually high current loads. The device features a low on-resistance channel, which helps to reduce power loss across the device. This also allows for increased efficiency, as less of the applied power is wasted as heat. The low on-resistance also helps to provide faster switching capability, allowing for quicker response times when the device is being used in AC, DC, or pulsed applications.

The APTM50DHM35G is also capable of providing excellent amplification properties. This is because the device contains several transistors in an array. The multiple transistors help to provide more uniform current gain and improved dynamic performance. The array configuration also makes the device more compact and easier to integrate with other components. This helps to make the device more versatile and capable of being used in a variety of applications.

The APTM50DHM35G is a highly reliable component that is well-suited for a wide range of applications. It is capable of providing fast switching times, excellent current gain, and improved energy efficiency. The device is also relatively similar to other MOSFETs, making it easier to integrate with other components. With its low on-resistance and excellent amplification abilities, the APTM50DHM35G is a powerful component for any industrial application.

The specific data is subject to PDF, and the above content is for reference

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