Allicdata Part #: | APTM100A46FT1G-ND |
Manufacturer Part#: |
APTM100A46FT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 1000V 19A SP1 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV)... |
DataSheet: | APTM100A46FT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: | 19A |
Rds On (Max) @ Id, Vgs: | 552 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Power - Max: | 357W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APTM100A46FT1G is part of a range of very high-speed, low power transistors, array devices from APTM. This range of devices are used in applications where high speed performance, low power consumption and a high level of integration are all required. This range of devices are ideal for use in power management, communication, industrial, automotive and medical applications.
The APTM100A46FT1G is a N-channel power metal oxide semiconductor field-effect transistor (MOSFET) array. It has an array of four transistors and is designed to be used in applications where high speed performance and low power consumption are both important. The transistors are composed of a single layer, single-poly-gate, drainage region and source region, and the electrodes are connected via an interdigitated common source lead.
The working principle of the APTM100A46FT1G is that when the gate voltage of the MOSFET is increased, the electrical field created between the gate and the source enhances the mobility of electrons from the source to drain. This increase in the flow of electrons causes a decrease in the voltage present at the drain. As the voltage at the drain increases, the current allowed to flow through the channel also increases, resulting in an increase in the output power of the device.
The APTM100A46FT1G can be used for power management applications such as DC to DC conversion and regulating and overvoltage protection, as well as high-speed switching applications such as Wi-Fi and Bluetooth modules. The device is also ideal for industrial and automotive applications such as motor control, temperature sensing, lighting control and reversing radar systems.
The APTM100A46FT1G provides excellent performance in terms of switching speed and power savings. Its low on-resistance of 8Ω and excellent 2.5A peak current capability make it ideal for high-speed switching applications. Its integrated ESD protection of +/- 2kV also helps protect against damage from electrostatic discharge.
In summary, the APTM100A46FT1G MOSFET array is a high performance, low power device with an integrated ESD protection that is suitable for a variety of applications in the power management, communication, industrial, automotive and medical sectors. The device offers excellent switching speed and power savings, making it an ideal solution for high speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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