APTM100UM45FAG

Vgs(th) (Max) @ Id:	5V @ 30mA
Package / Case:	SP6
Supplier Device Package:	SP6
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	5000W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	42700pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	1602nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	52 mOhm @ 107.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	215A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

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APTM100UM45FAG, or Advanced Power Technology\'s Advanced Power MOSFET (metal-oxide-semiconductor field-effect transistor) with a 45 nm technology node, is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in power management applications. These are commonly used in personal computers, televisions, and other consumer electronics applications, and can be used in mobile and motor control applications. In addition, it can be used in automotive, aerospace, defense, and heavy machinery applications, such as those found in the entertainment or industrial sectors.The APTM100UM45FAG is a power MOSFET that has a wide gate current and a wide operating voltage range. It is typically used to regulate large currents in high-frequency switching applications, as it has high frequency immunity and a high reverse transfer capability. It is also capable of carrying hard switching and soft switching, as well as dual-directional switching.The APTM100UM45FAG is ideal for applications that require a high switching frequency, high efficiency, and high current ratings. It is a low-voltage device with an operating voltage range of 4.5–13V. It features a low on-resistance, low total gate charge, high switching speed, and is available in standard or logic level threshold.The APTM100UM45FAG is a single-gate MOSFET, meaning it has a single terminal that actuates the MOSFET, instead of two as with dual-gate MOSFETs. A single gate MOSFET is more economical than most multi-gate devices and has fewer defects than devices with multiple terminals.The APTM100UM45FAG\'s work principle is based on the principles of drain and source biasing in the device. This is where the gate voltage is used to control the conductive channel between the drain and the source. When the gate voltage is below a threshold voltage, the channel is in an off state; when the gate voltage is above the threshold, the channel opens up and the current can flow through. The flow of the current is controlled by the gate-source and gate-drain voltages, and the conducting channel can be fully closed or fully open.The APTM100UM45FAG\'s key features are its low on-resistance and its high switching speed, which makes it an ideal choice for power management applications. It is also capable of carrying hard-switching and soft-switching, as well as dual-directional switching. Its wide operating voltage range, low total gate charge, and its low on-resistance make it an ideal choice for applications that require a high switching frequency, high efficiency, and high current ratings. In addition, its single-gate design is economical and offers fewer defects than other devices with multiple terminals.

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