APTM100A18FTG Allicdata Electronics
Allicdata Part #:

APTM100A18FTG-ND

Manufacturer Part#:

APTM100A18FTG

Price: $ 76.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1000V 43A SP4
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV)...
DataSheet: APTM100A18FTG datasheetAPTM100A18FTG Datasheet/PDF
Quantity: 1000
100 +: $ 69.95390
Stock 1000Can Ship Immediately
$ 76.95
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 43A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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The APTM100A18FTG is an array of 18 advanced Power MOSFETs (metal–oxide–semiconductor field-effect transistors). This technology provides several advantages to the user, such as long-term stability, low gate charge (Qg), low output capacitance (COSS), and high resistance–drain–source (RDSon). Moreover, using the APTM100A18FTG array allows for easier and more accurate device matching, as appropriate control elements have been added to each cell.

In terms of its application field, the APTM100A18FTG is ideally suited to high-end AMP and DC–DC conversion applications, including an array of power management, automotive, battery management and medical applications. It is also suitable for use in larger and highly voltage–sensitive applications.

The APTM100A18FTG is a versatile device and can be used as a linear or switch amplifier, or as a power amplifier for power heating or radio frequency (RF) power supply applications. It also integrates both digital and analog features for its application.

The working principle of the APTM100A18FTG is based on the three-terminal structure of an FET—such as the N-type and P-type—and their gate voltages. When a positive charge is applied to the gate terminal, the depletion layer between the substrate N-type and the P-type substrate will become thinner and the electron flow will be enhanced. This will lead to an increase in the current flowing through the drain and source terminals. Conversely, when a negative charge is applied to the gate terminal, the transistor will turn off and the current flow will be reduced.

The APTM100A18FTG’s low gate charge and high resistance–drain–source enable current switching at high frequencies with low power dissipation. Its integrated control elements also allow for easier device matching and higher precision in applications, increasing its efficiency and overall performance.

In conclusion, the APTM100A18FTG is an advanced array of power MOSFETs which is mainly used for power management, automotive, battery management, and medical applications. Its three terminal structure and gate voltages enable it to be used as a powerful switching or amplifying device. Furthermore, its integrated control elements allow for greater precision and accuracy, increasing its performance and usability.

The specific data is subject to PDF, and the above content is for reference

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