APTM100AM90FG Allicdata Electronics
Allicdata Part #:

APTM100AM90FG-ND

Manufacturer Part#:

APTM100AM90FG

Price: $ 148.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1000V 78A SP6
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV)...
DataSheet: APTM100AM90FG datasheetAPTM100AM90FG Datasheet/PDF
Quantity: 1000
100 +: $ 134.97300
Stock 1000Can Ship Immediately
$ 148.46
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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The APTM100AM90FG is a type of transistor array, specifically an insulated gate field effect transistor (IGFET). It is a monolithic structure, giving it the ability to provide evenly balanced operation with minimal external components. This makes it well suited for applications requiring high-speed switching and switching circuits that need to be protected from external noise generated from on/off transients.

The APTM100AM90FG uses an insulated gate to control the flow of current through a channel of semiconductor material. It has an input voltage that can range between 0V and 11V, the voltage charge flowing based on the input voltage. When the input voltage is at 0V, the transistor is known to be “ON”, gate charge is 0V and the output current will be 6A. When the input voltage is at 11V, the gate charge is 11V and the output current will be 0.3A.

The APTM100AM90FG is popularly used in numerous applications such as power management, computer power supplies, voltage regulators, converters, and audio amplifiers due to its high efficiency and performance. When it is used in active load applications, it reduces stress on the load and dissipates limited power at high frequencies due to its low on-state voltage drop. Additionally, it has an improved rated current at an identical temperature when compared to other similar conventional products, which makes it an ideal choice for applications demanding higher temperature and lighting conditions.

When it comes to the working principle of APTM100AM90FG, it reacts to the input voltage applied and accordingly varies the gate charge. The gate charge created is used to control the flow of electrons in and out of the transistor. When the gate charge is at 0V, the electrons flow freely and the transistor is said to be “ON”. When the gate charge is at 11V, the current crossing the transistor is blocked and the device is said to be “OFF”.

Apart from that, the APTM100AM90FG also has a few additional qualities like improved turn-on and turn-off times which make it appropriate for high barrel switching frequency applications. In addition, it requires minimal gate drive power, making it an appropriate choice for power supply controllers and motor control applications. Moreover, it has low gate input capacitance and high speed switching capabilities.

In conclusion, when it comes to transistors, the APTM100AM90FG is a great option. It is a monolithic structure with low on-state voltage drop and high reduction on switching transients. It has improved rated current over its competitor’s products, making it suitable for high temperature applications. Additionally, it also has low gate input capacitance, improved turn-on and turn-off times, and requires only minimal gate drive power for efficient switching applications.

The specific data is subject to PDF, and the above content is for reference

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