APTM10DDAM19T3G Allicdata Electronics
Allicdata Part #:

APTM10DDAM19T3G-ND

Manufacturer Part#:

APTM10DDAM19T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 100V 70A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) 100V 70A 208W Chas...
DataSheet: APTM10DDAM19T3G datasheetAPTM10DDAM19T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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APTM10DDAM19T3G is a small signal N-channel large area fet-array manufactured by Alpha and Omega Semiconductor Inc. This device combines multiple field-effect transistors (FETs) into an array structure. It features an integrated circuit with a variety of parameters that can be used to precisely control its operation, depending on the application.

The device has two N-channel transistor arrays with 10 gate current levels and 19 drain current levels. The maximum drain-source breakdown voltage is 10V. The threshold voltage makes it suitable for low/medium speed circuit applications. The maximum gate-source charge is -1.8uC and the capacitance per gate is 6.5pF.

This device can be used in a wide range of applications, from power switching and analog control to linear amplifiers. The FET array structure allows for better control of the output current and for a higher level of power efficiency, making it especially suitable for power conditions with limited space requirements. Additionally, this device offers improved performance in both low-voltage and high-voltage applications.

In order to understand how this device works, it is important to understand the working principle of an FET array. The device contains two main components: the main FET which provides the output and the FET array itself. The FET array acts as a buffer between the main FET and the user-controlled signals. The FET array is set up to receive the user signals and translates them into a controlled voltage or current at the output.

The APTM10DDAM19T3G device also includes two extra terminals, the Sources and Ground Terminals, that enable an external charge pump to be integrated with the device. This allows the device to be used in a wider range of applications. For example, it can be used to control current in a circuit, or to provide the necessary level of output for a computer system.

In conclusion, the APTM10DDAM19T3G is a highly efficient N-channel FET array which can be used in a wide range of applications. It can be used to control current and voltage in a circuit and be integrated with an external charge pump to increase its range of application. The device is especially suited for low voltage applications, helping to conserve power and providing great power efficiency.

The specific data is subject to PDF, and the above content is for reference

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