Allicdata Part #: | APTMC60TL11CT3AG-ND |
Manufacturer Part#: |
APTMC60TL11CT3AG |
Price: | $ 142.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 1200V 28A SP3 |
More Detail: | Mosfet Array 4 N-Channel (Three Level Inverter) 12... |
DataSheet: | APTMC60TL11CT3AG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 129.33700 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (Three Level Inverter) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 28A |
Rds On (Max) @ Id, Vgs: | 98 mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 1000V |
Power - Max: | 125W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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APTMC60TL11CT3AG, also known as its trade name FETs, MOSFETs and Arrays, is a field-effect transistor (FET). This FET has three general features which enable enhanced performance: the ability to handle high currents, the capability for low on-resistance and a low-input capacitance. It is a re-configurable component that runs various processes from either analog or digital signals, and is widely used in many applications. It is especially noted for its low switching times that can be used in areas such as high-speed data transmission.
A field-effect transistor (FET) is a semiconductor device which is composed of a gate, a source and a drain. When a voltage is applied to the gate, it controls the flow of electrons in the channel, which exists in between the source and the drain. The electrons flow from the source to the drain, and this flow rate is determined by the voltage applied to the gate. Thus, the FET works in a way akin to an adjustable valve. Generally, FETs can be either enhancement type or depletion type; the APTMC60TL11CT3AG is of the enhancement type.
Like other FETs, the APTMC60TL11CT3AG is designed for high-current, low-on-resistance operations and is a versatile, configurable component. It achieves a low on-resistance of 0.021 Ω, which results in higher power savings and an improved energy efficiency. This FET also features an ultra-low input capacitance (1.2 pF), making it suitable for applications that require high-speed switching. This feature also enables it to handle pulse frequencies surpassing 100 MHz.
Due to its versatile applications, the APTMC60TL11CT3AG is commonly used in a variety of applications. For example, it is used in voltage-controlled switch (VCS) applications like bilateral level-shifters, communication interface circuits, analog input circuits, pulse-width controls, digital transmission gates and LED drivers. It is also found in several digital circuits and has been proven to act as an excellent buffer in audio and voice applications. Additionally, it is used in medical equipment and can be employed as a power switch driver in stationary and mobile applications.
The APTMC60TL11CT3AG is also used in switchgear and protection circuits, such as surge suppressors, power and motor controllers, circuit protection devices and actuators. Additionally, it can be used in DC/DC converters, battery chargers and inverters, and in low-temperature environments, such as automotive and industrial applications. Because it offers zero SCR parasitics, it is ideal for space-limited applications and for motor switching use, too.
The APTMC60TL11CT3AG has a relatively low switching speed, making it less suitable for applications requiring ultra-fast switching. Nevertheless, it is an excellent transistor for most general-purpose applications. Its high on-resistance, low input capacitance and high current-handling capabilities make it one of the most versatile FETs available.
The specific data is subject to PDF, and the above content is for reference
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