BLC9G15LS-400AVTY

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLC9G15LS-400AVTY is a N-channel field effect transistor (FET) designed for high-precision RF applications. It is a MOSFET designed to provide exceptional low-noise performance, coupled with high linearity gain and wide bandwidth operation. This transistor is fabricated using advanced planar semiconductor technology that enhances its temperature stability, reliability and reliability.

The transistor has a low-loss gate oxide which reduces gate capacitance resulting in reduced switching times. It has excellent high frequency characteristics including high isolation and constant-voltage gain over a wide temperature range. The transistor is available in a variety of packages that offer the flexibility to meet various application requirements.

The BLC9G15LS-400AVTY is intended for use as an amplifier or oscillator in RF receivers and transmitters, where its high output power handling capability and low-noise characteristics make it an ideal choice. Additionally, its linearity and instant response make it suitable for video, audio and digital signal processing applications. The transistor also provides good freedom from interference in medical devices, as it has low levels of switching noise.

The BLC9G15LS-400AVTY uses the basic FET switching principle in which an electric field is used to control the transistor’s conductivity or transconductance. The MOSFET is typically biased into a non-conducting state with the gate-source voltage at a high level. When a positive gate-source voltage is applied, the water-filled electrons in the channel are pulled in by the electric field and the transistor becomes conducting. As long as the gate voltage is maintained, the current will flow. If the gate voltage is decreased, the electric field will decrease and the carrier electrons will become un-trapped, causing the transistor to turn off.

In addition to its high-performance properties, the BLC9G15LS-400AVTY has superior thermal efficiency. It is designed to conduct low-level currents with a minimal amount of power dissipation. This feature allows the transistor to be used in high-current applications without significantly affecting the temperature of surrounding components. This feature makes it ideal for applications where thermal issues are of critical concern.

Through its advanced design and superior performance, the BLC9G15LS-400AVTY has a wide variety of applications, including radio frequency (RF) amplifiers, radio-frequency mixers, voltage-monitoring circuits and power amplifiers, among many others. Its versatile design and enhanced performance make it an ideal solution for high-precision RF applications.

The specific data is subject to PDF, and the above content is for reference