BLC9G24XS-170AVZ

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.3GHz ~ 2.4GHz
Gain:	15.5dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	250mA
Power - Output:	170W
Voltage - Rated:	65V
Package / Case:	SOT1275-3
Supplier Device Package:	SOT1275-3

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Introduction The BLC9G24XS-170AVZ is an RF FET (Field Effect Transistor) designed for high reliability pulse applications. It is commonly used in medium to high power radiofrequency (RF) transmitters, power amplifiers and other applications requiring significant power delivery. It is a N-type, high voltage, naturally-air-cooled FET. It features an internally-connected source for simplifying PC board layout, as well as a low gate-drain capacitance for good linearity. This FET also has an extremely high working voltage of up to 170V, making it ideal for high power applications such as high power transmitters and power amplifiers.Application FieldThe BLC9G24XS-170AVZ is used in RF transmission and power amplification applications. Its high voltage working voltage of up to 170V makes it ideal for high power applications such as high power transmitters and power amplifiers. It is also used in many other medium and high power applications, such as broadcast television, Wi-Fi, satellite, and mobile communication networks.Due to its internally connected source, the BLC9G24XS-170AVZ can be used in both single-ended and balanced configuration RF designs. This allows it to be used in power combining applications, as well as in multi-push pull applications.Working PrincipleThe BLC9G24XS-170AVZ is a FET, or Field Effect Transistor, which works on the principle of an electric field controlling the flow of current. This FET is N-type, meaning it uses a negative gate voltage in order to control the current through the channel. When a negative voltage is applied to the gate of the FET, the current is allowed to flow through the channel. When the negative voltage is removed, the current is blocked.The BLC9G24XS-170AVZ is also a high voltage FET, meaning it can withstand a higher voltage than more typical FETs. This allows it to be used in high power applications, where higher voltages are required in order to effectively amplify the signal.ConclusionThe BLC9G24XS-170AVZ is an RF FET designed for high reliability pulse applications. It is commonly used in medium to high power radiofrequency (RF) transmitters, power amplifiers and other applications requiring significant power delivery. It features an internally-connected source for simplifying PC board layout, as well as a low gate-drain capacitance for good linearity. This FET also has an extremely high working voltage of up to 170V, making it ideal for high power applications such as high power transmitters and power amplifiers. Due to its N-type properties and high voltage operation, the BLC9G24XS-170AVZ is a versatile FET suitable for a variety of medium to high power applications.

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