BLC9G20LS-240PVZ Allicdata Electronics
Allicdata Part #:

1603-1058-ND

Manufacturer Part#:

BLC9G20LS-240PVZ

Price: $ 56.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18DB SOT12753
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 1.6A 1.8...
DataSheet: BLC9G20LS-240PVZ datasheetBLC9G20LS-240PVZ Datasheet/PDF
Quantity: 44
1 +: $ 51.72300
10 +: $ 49.13810
100 +: $ 44.28870
Stock 44Can Ship Immediately
$ 56.9
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.81GHz ~ 1.88GHz
Gain: 18dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.6A
Power - Output: 240W
Voltage - Rated: 65V
Package / Case: SOT1275-3
Supplier Device Package: DFM6
Description

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The BLC9G20LS-240PVZ is a high integration, high performance and low cost of Gallium Nitride (GaN) Enhancement Mode Power Field Effect Transistor (FET). This transistor is suitable for linear amplifiers and drivers in various applications.

The BLC9G20LS-240PVZ has an integrated gate support capacitor and an integrated source inductor to reduce the parasitic capacitance of the gate. It also has integrated ESD protection to provide protection and outstanding stability. This FET is capable of high speed, low noise operation, making it suitable for broadband use in the high frequency range from 900 MHz to 2.4 GHz.

The BLC9G20LS-240PVZ has an extended power range of 20 Watts, making it suitable for both narrowband and broadband applications. It has a maximum drain-source voltage of 120V, and a maximum drain current of 15 Amps. This device has high power density, high linearity, and low noise figure. It is packaged in a 4-pin over-molded (DIP) package, which makes it suitable for a wide variety of applications, including Automotive, Consumer Electronics, Industrial, and Military.

The working principle behind the BLC9G20LS-240PVZ is based on the transfer of electrons from the source to the drain of a FET. When a voltage is applied to the gate, this creates an electric field which attracts electrons from the source to the drain, allowing for current flow. The source-drain current is proportional to the voltage applied to the gate, making it very efficient and highly linear.

The BLC9G20LS-240PVZ has a wide range of applications, from low power linear amplifiers to high power RF amplifiers. It is ideal for wireless communication, Wi-Fi, Bluetooth, satellite communication, and other high frequency applications. Additionally, it is suitable for RF linear voltage regulators, RF power amplifiers, and RF switches.

The BLC9G20LS-240PVZ is a highly efficient and reliable GaN Enhancement Mode FET. Its integrated gate support capacitor and source inductor reduce parasitic capacitance, while its integrated ESD protection ensures a long operational life. With its high power density, extended power range and four-pin over-molded (DIP) package, it is suitable for a wide range of applications in automotive, consumer electronics, industrial, and military markets.

The specific data is subject to PDF, and the above content is for reference

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