BLC9G22LS-160VTZ

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.2GHz
Gain:	18.4dB
Voltage - Test:	28V
Current Rating:	2.8µA
Noise Figure:	--
Current - Test:	864mA
Power - Output:	35W
Voltage - Rated:	65V
Package / Case:	SOT-1271-2
Supplier Device Package:	SOT1271-2

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BLC9G22LS-160VTZ Application Field and Working Principle

The BLC9G22LS-160VTZ is a high-performance, high-frequency, surface-mount MOSFET transistor manufactured by Infineon. It can handle a wide range of applications due to its low capacitance, excellent temperature stability, and wideband frequency response. This transistor is ideal for use in dual-gate amplifiers, RF oscillators, switches, or linear amplifiers.

Features

The BLC9G22LS-160VTZ is constructed with an advanced silicon gate MOSFET process technology and features a low gate charge, high-speed switching time, and an integrated Zener clamp diodes for electrostatic discharge protection. Its gate-source forward voltage is rated at (-1.5 to -3V). Typical applications of the BLC9G22LS-160VTZ include dynamic loading, broadband amplifiers, analog amplifiers, and RF amplification.

Working Principle

The MOSFET is a type of field-effect transistor that uses the electrical field generated by a gate terminal between the drain and source terminals to control the flow of electrons. The operation of MOSFETs is voltage-driven, meaning that a voltage applied between the gate and the source will control the drain current.MOSFETs are often used in high-power applications that require very little input current. The BLC9G22LS-160VTZ is well-suited for these applications because its low gate-source forward voltage allows it to efficiently hold the gate voltage necessary to fully switch the current on or off. Additionally, the low capacitance between the drain and source allow for high switching speed and low distortion.

Applications

The BLC9G22LS-160VTZ is suitable for use in a variety of radio-frequency (RF) applications, such as oscillators, high-power amplifiers, and antenna switching. It is also used in linear amplifiers, filtering circuits, voltage regulators, active clamp circuits, battery chargers, and digital audio amplifiers.In addition to RF applications, the BLC9G22LS-160VTZ is also suitable for analog amplifiers, switched-mode power supplies, power switching circuits, static relays, and variable-width pulse-width modulators.

Conclusion

The BLC9G22LS-160VTZ is a high-performance, surface-mount MOSFET transistor manufactured by Infineon. It has a low gate charge, high-speed switching time, and an integrated Zener clamp diode for electrostatic discharge protection. The BLC9G22LS-160VTZ is ideal for use in high-power applications, as it can efficiently provide on/off switching with low distortion. It is also suitable for use in RF oscillators, dual-gate amplifiers, and analog amplifiers, as well as a variety of other applications.

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