BLC9G20XS-160AVZ

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The BLC9G20XS-160AVZ is part of a line of power field-effect transistors (FETs) designed for use in RF amplifier applications. The device has an output power of 16 W, an input signal level range of 0.2 to 1 V, and a supply voltage of 12 to 24 V. It is designed to operate at a frequency range of 300 MHz to 1 GHz and has a low total harmonic distortion (THD) of -59 dB. The device is also well suited to applications that require high power efficiency and power-added efficiency. It is also able to withstand high DC and RF voltage, making it suitable for high-power RF amplifier applications.

The primary difference between the BLC9G20XS-160AVZ and other FETs is its internal topping-off circuit, which allows for both shortterm boost of output power and longterm protection against output power overloading. This provides greater surge current stability, allowing for a more consistent performance over time. The device also includes a power limiter and a built-in electrostatic discharge (ESD) protection circuit, which protects the device in cases of high static charge.

The BLC9G20XS-160AVZ is built with a dual gate architecture and a single-source/drain process. This architecture allows for a superior overall performance by utilizing both a controlled gate side and a flat bleed side. The device also utilizes a Field Plated Metal Source (FPS) technology, which reduces the gate inductance, thereby improving the device’s high-frequency performance. Additionally, the FPS technology reduces operating power losses, thus increasing overall efficiency.

The BLC9G20XS-160AVZ is commonly used in applications such as mobile telephone base station amplifiers, low-noise preamplifiers, amplifier blocks, transceivers, and other RF amplifying needs. The device is also useful for up to 1 GHz voltage-controlled oscillators and transmitters. The device’s wide operating voltage range, low noise level, and high power are advantageous for these applications.

The device works by using a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). The MOSFET acts as a switching device, allowing current to flow from source to drain when the gate voltage is applied. When a specific voltage, or threshold voltage, is applied to the gate, the MOSFET will turn on. The device is then able to amplify a radio frequency signal by passing the incoming signal through the channel between the source and drain contacts. The channel’s width is controlled by the gate voltage, which allows for precise control of the device’s current gain.

The BLC9G20XS-160AVZ is an ideal choice for high-frequency amplification needs in many different applications. It is reliable, efficient, and easy to use, making it a great choice for any device requiring high power and performance. The device’s wide operating voltage range, low noise level, and high power capabilities make it suitable for a variety of audio, RF, and microwave amplification needs.

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