BLC9G20LS-160PVZ

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.805GHz ~ 2GHz
Gain:	20dB
Voltage - Test:	28V
Current Rating:	1.4µA
Noise Figure:	--
Current - Test:	860mA
Power - Output:	38W
Voltage - Rated:	65V
Package / Case:	SOT1275-1
Supplier Device Package:	SOT-1275-1

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IntroductionBLC9G20LS-160PVZ is a type of transistor, categorised as a Field Effect Transistors (FETs), and more specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET). These types of transistors have many uses, one of the most common being their use in radio frequency (RF) applications. This article will provide an overview of the BLC9G20LS-160PVZ, including its application field, working principle, and other related information.Application FieldTheBLC9G20LS-160PVZ is often used in radio frequency (RF) applications. These devices are particularly suited to high frequency (HF) and ultra-high frequency (UHF) applications, owing to their high input impedance and low power consumption. In these applications, the BLC9G20LS-160PVZ provides amplification and switching of radio frequency signals. They can also be used as linear amplifiers, voltage controlled attenuators, or modulators/demodulators. As such, BLC9G20LS-160PVZ transistors are commonly found in a range of electronics, including RF communication systems, RF power amplifiers, and RF switching applications.Working PrincipleThe BLC9G20LS-160PVZ transistor is a three-terminal device, which consists of a source, drain, and gate. It is a type of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). When an electric field is applied to the gate, it forms an inversion layer of charge carriers, which create a path between the source and drain. This allows current to flow between the two. The resistance of the circuit is determined by the voltage applied to the gate. The higher the voltage, the lower the resistance, and vice versa. The resulting current flow is proportional to the applied voltage, resulting in an amplification effect.Additional InformationThe BLC9G20LS-160PVZ is a three-terminal, N-channel enhancement type MOSFET. It has a drain-source breakdown voltage of 160 Volts (V) and a maximum drain current of 20 Amperes (A). The maximum drain-source on-state resistance (RDSon) is 10 milliohms (mΩ) and the maximum gate-source leakage current is 0.1 nanoamperes (nA). It also has a maximum junction temperature of 175°C and a storage temperature range of -55°C to +150°C. The maximum positive gate-source voltage is +20V.ConclusionThe BLC9G20LS-160PVZ is a metal-oxide-semiconductor field-effect transistor (MOSFET), commonly used in radio frequency (RF) applications. It is an N-channel enhancement type MOSFET and has a drain-source breakdown voltage of 160V. When a voltage is applied to the gate, it creates an inversion layer of charge carriers, allowing current to flow between the source and the drain. This amplifies the voltage, providing additional efficiency and power savings. As such, the BLC9G20LS-160PVZ is an ideal choice for a wide range of RF applications.

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