Allicdata Part #: | BLC9G20LS-120VTY-ND |
Manufacturer Part#: |
BLC9G20LS-120VTY |
Price: | $ 38.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 28V SOT1271-2 |
More Detail: | RF Mosfet LDMOS 28V 700mA 1.805GHz ~ 1.995GHz 18.5... |
DataSheet: | BLC9G20LS-120VTY Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 35.10590 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.805GHz ~ 1.995GHz |
Gain: | 18.5dB |
Voltage - Test: | 28V |
Current Rating: | 2.8µA |
Noise Figure: | -- |
Current - Test: | 700mA |
Power - Output: | 172W |
Package / Case: | SOT-1271-2 |
Supplier Device Package: | SOT1271-2 |
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BLC9G20LS-120VTY is a type of Field Effect Transistor (FET) used for radiofrequency (RF) applications. It is a compact and low power device that is ideal for use in areas such as radio frequency switching, amplifiers, and voltage-controlled oscillators (VCOs). The following sections explain the technical specifications and working principles of BLC9G20LS-120VTY.
Technical Specifications
The transmitter performs best in terms of power output when operated with a supply voltage of between 5 and 12 volts DC. Under that same supply voltage range, the typical peak-to-peak drain current is 7 mA, while the total gate capacitance is negligible. The power gain of the device under those conditions is typically 17 dB, and its thermal resistance from the junction to the ambient environment is 55 degrees Celsius/ Watt.
Working Principle
BLC9G20LS-120VTY utilizes an insulated-gate bipolar transistor (IGBT) as its primary element for voltage and current control purposes, allowing for very precise and progressive voltage regulation and management. This transistor is connected in a “depletion mode” configuration, meaning that it only conducts an RF signal when its gate-to-source voltage is positive.
When a signal is sent, the transistor’s junction starts to conduct at the point where the signal crosses the threshold set by the supply voltage. As the signal progresses, the current increases, moving away from the initial threshold. The current continues to increase, eventually reaching its maximum limit, turning off the transistor and ending the transmission.
Advantages
The BLC9G20LS-120VTY offers several advantages, among them a high degree of control when it comes to RF transmissions and a low power consumption. Since it is a depletion-mode FET, the only current it carries is the signal current, allowing for more efficient and accurate power management.
Additionally, the BLC9G20LS-120VTY has a low thermal resistance, making it well-suited for temperature-critical applications that require faster and more accurate control. The small size of the device also makes it ideal for applications where space is a major factor, such as low-voltage analog signal amplifiers and VCOs.
Disadvantages
Despite the numerous advantages associated with the BLC9G20LS-120VTY, it also has some drawbacks, most notably, its high signal-dependent loss, which can affect performance in some applications. Additionally, since it requires an extensive cooling system to lower the thermal resistance, it can add to the cost and complexity of the overall system.
Conclusion
Overall, the BLC9G20LS-120VTY is a reliable, low-power Field Effect Transistor that offers excellent performance and accuracy when used in radio frequency (RF) applications, such as voltage-controlled oscillators and amplifiers. Despite its high signal-dependent loss and the additional cost associated with the cooling system, its small size, high degree of control, and low power consumption make it the ideal choice for most applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLC9G20XS-160AVZ | Ampleon USA ... | 49.78 $ | 155 | RF FET LDMOS 65V 16.6DB S... |
BLC9G22XS-400AVTZ | Ampleon USA ... | 60.28 $ | 280 | RF FET LDMOS 65V 15.3DB S... |
BLC9G20LS-361AVTY | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 15.7DB S... |
BLC9H10XS-300PZ | Ampleon USA ... | 57.43 $ | 60 | BLC9H10XS-300P/SOT1273/TR... |
BLC9G20XS-400AVTZ | Ampleon USA ... | 60.28 $ | 126 | RF FET LDMOS 65V 16.2DB S... |
BLC9G20LS-361AVTZ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 15.7DB S... |
BLC9H10XS-350AZ | Ampleon USA ... | 68.89 $ | 60 | BLC9H10XS-350A/SOT1273/TR... |
BLC9G15XS-400AVTZ | Ampleon USA ... | 68.89 $ | 50 | RF MOSFET LDMOS 32V SOT12... |
BLC9G15LS-400AVTZ | Ampleon USA ... | 77.5 $ | 50 | RF FET LDMOS 65V 16DB SOT... |
BLC9G20XS-550AVTZ | Ampleon USA ... | 108.02 $ | 54 | RF FET LDMOS 65V 15.4DB S... |
BLC9G21LS-60AVY | Ampleon USA ... | 31.43 $ | 100 | BLC9G21LS-60AV/SOT1275/RE... |
BLC9G21LS-60AVZ | Ampleon USA ... | 37.3 $ | 60 | BLC9G21LS-60AV/SOT1275/TR... |
BLC9G20LS-120VZ | Ampleon USA ... | 45.84 $ | 60 | RF FET LDMOS 65V 19.2DB S... |
BLC9G27LS-151AVZ | Ampleon USA ... | 53.33 $ | 67 | RF FET LDMOS 65V 15.6DB S... |
BLC9G20LS-150PVZ | Ampleon USA ... | 53.33 $ | 60 | RF FET LDMOS 65V SOT12753... |
BLC9G20LS-160PVZ | Ampleon USA ... | 53.33 $ | 60 | RF MOSFET LDMOS 28V SOT12... |
BLC9G22LS-160VTZ | Ampleon USA ... | 53.33 $ | 57 | RF MOSFET LDMOS 28V SOT12... |
BLC9G24XS-170AVZ | Ampleon USA ... | 53.33 $ | 14 | RF FET LDMOS 65V 15.5DB S... |
BLC9G20LS-240PVZ | Ampleon USA ... | 56.9 $ | 44 | RF FET LDMOS 65V 18DB SOT... |
BLC9G20LS-470AVTZ | Ampleon USA ... | 77.5 $ | 21 | RF FET LDMOS 65V 15.7DB S... |
BLC9G20LS-120VY | Ampleon USA ... | 38.61 $ | 1000 | RF FET LDMOS 65V 19.2DB S... |
BLC9G27XS-380AVTZ | Ampleon USA ... | 68.89 $ | 1000 | BLC9G27XS-380AVT/SOT1258/... |
BLC9H10XS-60PY | Ampleon USA ... | 28.5 $ | 1000 | BLC9H10XS-60P/SOT1273/REE... |
BLC9H10XS-60PZ | Ampleon USA ... | 28.5 $ | 1000 | BLC9H10XS-60P/SOT1273/TRA... |
BLC9G20LS-120VTY | Ampleon USA ... | 38.61 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G20LS-120VTZ | Ampleon USA ... | 41.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G20XS-160AVY | Ampleon USA ... | 42.62 $ | 1000 | RF MOSFET LDMOS 30V SOT12... |
BLC9G27LS-151AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 15.6DB S... |
BLC9G20LS-150PVY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET SOT1275 REELDPR... |
BLC9G20LS-160PVY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G22LS-160VTY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G24XS-170AVY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 30V SOT12... |
BLC9G20LS-240PVY | Ampleon USA ... | 48.72 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLC9H10XS-300PY | Ampleon USA ... | 49.27 $ | 1000 | BLC9H10XS-300P/SOT1273/RE... |
BLC9G20XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
BLC9G22XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
BLC9G15XS-400AVTY | Ampleon USA ... | 59.12 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
BLC9G27XS-380AVTY | Ampleon USA ... | 59.12 $ | 1000 | BLC9G27XS-380AVT/SOT1258/... |
BLC9H10XS-350AY | Ampleon USA ... | 59.12 $ | 1000 | BLC9H10XS-350A/SOT1273/RE... |
BLC9G20LS-470AVTY | Ampleon USA ... | 66.51 $ | 1000 | RF FET LDMOS 65V 15.7DB S... |
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