BLC9G27XS-380AVTZ

BLC-9G27XS-380AVTZ is an application field and working principle that belongs to Transistors - FETs, MOSFETs - RF. It is an RF power MOSFET that enables an efficient, robust, and reliable transmission of high frequency signals. This particular MOSFET includes a drain voltage (VD) of 32 V and a maximum drain current (ID) of 21 A.

The term “MOSFET” stands for “metal-oxide-semiconductor field effect transistor.” It is a type of transistor which is capable of controlling large amounts of current by applying a small amount of voltage. Furthermore, it is capable of operating at high-frequency signals and can provide great efficiency, robustness, and reliability. This MOSFET is mainly used in applications such as switching circuits, amplifier circuits, logic circuits, and communication circuits.

The core principle of a MOSFET is that it has three pins or terminals that are connected to a voltage source. The three pins include the source, gate, and drain. In a MOSFET, when the gate receives a positive signal, current is able to flow from the source to the drain. This is known as the “on-state”. On the other hand, when the gate receives a zero signal, the current from the source to the drain is blocked or stopped. This is known as the “off-state”. Thus, the MOSFET can be used to control the amount of current output.

BLC-9G27XS-380AVTZ is a type of RF power MOSFET. This type of MOSFET is specifically designed to operate at extremely high frequencies, typically in the range of 10 MHz to 3GHz. As such, it is mainly used in radio frequency applications such as antennas, amplifiers, and cellular communications. Its drain voltage is 32 V and its maximum drain current is 21 A. Furthermore, it has a low parasitic capacitance, high linearity, and low current leakage, making it an ideal choice for RF power amplification.

In conclusion, BLC-9G27XS-380AVTZ is an application field and working principle belonging to Transistors - FETs, MOSFETs - RF. It is an RF power MOSFET that is mainly used in radio frequency applications such as antennas, amplifiers, and cellular communications. It has a common drain voltage of 32 V, maximum drain current of 21 A, and low parasitic capacitance, high linearity, and low current leakage. These features make it a great choice for RF power amplification.