BLC9G20LS-361AVTY

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.81GHz ~ 1.88GHz
Gain:	15.7dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	0.6dB
Current - Test:	300mA
Power - Output:	360W
Voltage - Rated:	65V
Package / Case:	SOT-1258-3
Supplier Device Package:	DFM6

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BLC9G20LS-361AVTY is a high voltage N-channel MOSFET that uses a double gate structure. It is usually used for radio frequency applications. This MOSFET is fabricated using 0.18-um n-channel low-k process technology. It has a die area of approximately 1.16 mm x 1.0 mm. This makes it suitable for use in RF power amplifiers and switching circuits.The BLC9G20LS-361AVTY has a drain current at 25C of1A and a drain-to-source breakdown voltage of 12V. It has a low-noise performance that is good enough for RF applications. It has high power efficiency and low power losses. It has a maximum operating frequency of 10GHz.The working principle of this MOSFET is simple. This MOSFET works by controlling the charge carriers (electrons or holes) between the source and the drain. The gate voltage is used to control the flow of the charge carriers. When the gate voltage is raised, the field effect between the source and the drain increases, allowing for more current to flow through the device. This allows for better power efficiency and greater control of the drain current.The field effect allows for this MOSFET to operate with relatively low power dissipation. This makes it an ideal choice for RF applications. It can be used in power amplifiers and switching circuits up to 10GHz. It has a low drain-to-source capacitance which reduces switching losses.To use this MOSFET, it must be connected to a voltage source, similar to any other transistor. The gate voltage must be raised in order to allow current to flow between the source and the drain. The gate voltage can be adjusted by using a potentiometer, allowing for precise control of the drain current.The BLC9G20LS-361AVTY is an ideal choice for RF applications due to its high power efficiency and precise control of the drain current. It can be used in power amplifiers and switching circuits up to 10GHz. The double gate structure and low-noise performance make it a great choice for RF applications.

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