BLC9H10XS-60PZ Allicdata Electronics
Allicdata Part #:

BLC9H10XS-60PZ-ND

Manufacturer Part#:

BLC9H10XS-60PZ

Price: $ 28.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: BLC9H10XS-60P/SOT1273/TRAYDP
More Detail: RF Mosfet
DataSheet: BLC9H10XS-60PZ datasheetBLC9H10XS-60PZ Datasheet/PDF
Quantity: 1000
500 +: $ 25.91030
Stock 1000Can Ship Immediately
$ 28.5
Specifications
Series: --
Part Status: Active
Transistor Type: --
Frequency: --
Gain: --
Current Rating: --
Noise Figure: --
Power - Output: --
Package / Case: --
Supplier Device Package: --
Description

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The BLC9H10XS-60PZ is a type of Field-Effect Transistor (FET) designed for radio frequency (RF) applications. It is primarily used in high-power devices, such as amplifiers and filters. FETs are special classes of transistors that use an applied electric field to determine the current flowing through the device.

The BLC9H10XS-60PZ is a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a type of FET that utilizes a metal gate that is insulated from the rest of the semiconductor material. This allows an electric field to be applied directly to the gate, which enables the device to operate at frequencies up to 1.5GHz.

The BLC9H10XS-60PZ is suitable for use in a number of RF applications. It can be used to build amplifiers and filters, which are typically found in RF devices. It can also be used for RF switching, where the MOSFET is used to control the on/off state of a signal. Additionally, it can be used to form digital logic circuits, allowing the user to create complex functionality in their designs.

The way that MOSFETs like the BLC9H10XS-60PZ work is relatively simple. When a voltage is applied to the gate, it forms an electric field that extends into the bulk of the semiconductor material. This allows current to flow between the source and drain terminals. By adjusting the voltage on the gate, the amount of current that flows through the device can be controlled.

Another advantage of MOSFETs is that they can be used in low-voltage applications, as the voltage that is applied to the gate does not have to be as high as in other types of transistors. This allows the user to create circuits that are more efficient, as well as easier to control. Furthermore, the low gate voltage also reduces the power consumption of the device.

The BLC9H10XS-60PZ is a powerful, reliable, and easily configurable MOSFET designed for use in high-performance RF devices. It is an ideal choice for applications that require efficient power control and precise analog signal processing. Thanks to its low gate voltage and high performance, it is a great option for high-power RF circuits. With its versatile design, the BLC9H10XS-60PZ is a great choice for any engineer looking to build a reliable and efficient RF system.

The specific data is subject to PDF, and the above content is for reference

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