BLC9G15XS-400AVTZ

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The BLC9G15XS-400AVTZ is a widely used RF MOSFET transistor, which is often employed in wireless communication and other related applications. It is a dual-gate, unipolar field-effect transistor, whose input and output nodes employ single-ended dynamic voltage, created by the current flowing through the internal drain-source channel. Its voltage handling capability is up to 400 volts and its power dissipation capability is up to 15 watts, making it ideal for numerous applications.

The main characteristics of the BLC9G15XS-400AVTZ include a typical threshold voltage of 2.15 volts and an RDS (ON) of 7.6 ohms. It has a very low gate-source capacitance of 0.24 pF, and a low gate-drain capacitance of 0.3 pF. It also has a low forward transconductance of 4.9 mS and a high input impedance of 78 ohms. The RF transition frequency (fT) of this MOSFET is 8 GHz, which means it can be used in applications requiring a high speed of operation.

The working principle behind the BLC9G15XS-400AVTZ is based on the “positive-channel” type of MOSFET, whereby "holes" instead of electrons are allowed to propagate through the device. This arrangement is especially suitable for RF applications, due to its low gate-source capacitance, which enables the device to remain relatively immune to transient signals. The overall design improves the device’s nonlinear distortion and increases its linear gain and low-noise characteristics.

The BLC9G15XS-400AVTZ is mainly used in the field of wireless communication, particularly applications that require a high-speed of operation, low noise, and a low forward transconductance. It is used in various applications such as amplifiers and signal generators, high-power oscillators, and RAM memory. It is also employed in radio frequency identification (RFID) applications, personal computer peripherals, digital audio, GPS devices and other related applications.

To sum up, the BLC9G15XS-400AVTZis a high performance RF MOSFET transistor with a wide range of applications. Its unique design enables the device to remain relatively immune to transient signals and increases its linear gain and low-noise characteristics. Its high voltage handling capability, combined with its high speed of operation makes it ideal for numerous applications that require a high degree of precision.

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