BLC9G21LS-60AVZ

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The BLC9G21LS-60AVZ is a N-Channel Enhancement mode field-effect power transistor (FET) that trades off higher gate-source voltage to obtain lower current. It is a type of transistor known as a metal–oxide–semiconductor field-effect transistor (MOSFET). Developed specifically for radio frequency (RF) applications, the BLC9G21LS-60AVZ offers the versatility needed to meet the most demanding transmission and reception requirements.

The BLC9G21LS-60AVZ features a low transistor threshold voltage of 0.4 V, allowing for higher maximum gate drive, enabling it to operate at higher frequencies and power levels. Additionally, the transistor has an operational frequency of up to 2GHz and can handle up to 150 watts of output power. This makes it highly suitable for multi-carrier radio transmitters, radio frequency (RF) power amplifiers, and high-frequency power applications.

The BLC9G21LS-60AVZ has a low total gate charge (TGT) of 0.96 nC. This relatively low charge allows the transistor to operate with lower voltage and drain-source (VDS) requirements, reducing power dissipation and providing higher efficiency. The device also has a low output capacitance (COSS) of 9 pF, ensuring good frequency response and low distortion for full frequency response over a wide range of power levels and load conditions.

In addition, the BLC9G21LS-60AVZ has a rugged and dependable performance. Its low on-resistance value of 0.03 ohm allows it to handle high current in both forward and reverse directions. Its high peak power rating and high breakdown voltage of 60 V make it suitable for many demanding conditions. The device is also built with a shielded structure to avoid and protect against electromagnetic interference (EMI) from other sources, allowing for reliable operation in high EMI environments.

The BLC9G21LS-60AVZ operates as an RF power transistor, using an electric field between a source and a drain to control the flow of current through a channel. To produce the electric field, a voltage is applied to the gate, which attracts electrons and sets up a negative charge at the source end of the channel. This charge creates a barrier at the source end of the channel, preventing current in the negative direction and allowing current in the positive direction. This process of controlling the flow of current through the channel is known as the working principle of the MOSFET.

Overall, with its high current capacity and low voltage requirements, the BLC9G21LS-60AVZ is an excellent choice for a wide variety of RF and power applications, such as communications systems, mobile radios, RF power amplifiers, and RF power switching applications. Able to handle up to 150 watts of output power, this FET is built for increased ruggedness and performance in high-performance settings. Its low TGT, low output capacitance, and shielded structure make this device highly suitable for operating in high EMI environments, allowing for reliable operation.

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