BLC9G27LS-151AVZ

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The BLC9G27LS-151AVZ is a Laterally Profiled FET (LPFET), which has high current-carrying capacity, low drain-source on-state resistance, and good static and dynamic thermal characteristics. The device is developed using advanced BiCMOS process technology, which can provide fast switching frequency with low power consumption. It is mainly used for Radio Frequency (RF) applications, with power output up to 35 dBm.

Application Field

The BLC9G27LS-151AVZ device is mainly used for RF applications due to its high current-carrying combined with low on-state resistance. Its power output of up to 35 dBm makes it ideal for high power radio frequency applications such as high-efficiency power amplifiers, wideband amplifiers, and transmitter power amplifiers. The maximum output power of this device is 35 dBm, at an operating temperature of –65 °C to +85 °C.

Besides RF applications, the BLC9G27LS-151AVZ can also be used in power management, such as low voltage DC-DC converters and DC motors. Due to its low resistance and high current-carrying characteristics, it can also be used in high-side and low-side switch applications such as MOSFET drivers, inverters, and commutators.

Working Principle

The BLC9G27LS-151AVZ device works as a laterally profiled field-effect transistor (LPFET). It is basically a vertical MOSFET which has been “flattened” out. This feature gives the device a very low drain-source on-state resistance, which in turn results in high switching frequency and low power consumption. This device is made using advanced BiCMOS process technology, which provides its high-power output up to 35 dBm.

When applied a voltage to the gate terminal, the device acts like a conventional vertical MOSFET. The voltage at the gate terminal creates a field which induces current flow between the source and drain terminals of the device. This current flow will be proportional to the voltage applied, thus providing the necessary power for the application.

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