BLC9H10XS-60PY

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The BLC9H10XS-60PY is a silicon P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for radio-frequency (RF) applications. It is specifically designed for frequencies ranging from the 400 MHz to 3.2 GHz range. It is capable of handling higher power than traditional RF MOSFETs and transistor voltage and current operation.

Design

The BLC9H10XS-60PY is made of a silicon body encased in a plastic housing. Its gate electrode is connected to an insulated gate terminal and source electrode is connected to a source terminal. It comes in a surface mount form factor with a maximum case temperature of 158°F (70°C), a maximum drain voltage of 6.0 V and a maximum drain to source voltage of 8.9 V. Standard packaging is in a 8-Lead Small Outline Integrated Circuit (SOIC) package, making the BLC9H10XS-60PY suitable for space-constrained applications.

Applications

The BLC9H10XS-60PY is best suited for RFOCMOS applications needing higher power than traditional RF devices can provide. It can be used in RF power amplifiers, RF transmitters, RF receivers, antenna tuning elements and other similar applications. It has been tested to operate over a range of frequencies from 400 MHz to 3.2 GHz with excellent noise characteristics and gain performance.

Working Principle

The BLC9H10XS-60PY works much like a typical MOSFET. It operates through a process called field effect, where an electric field between the insulated gate and the source controls the current that flows through the device. This field effect is created by the amount of voltage at the gate terminal, which determines how much current flows between the drain and source. This makes the BLC9H10XS-60PY an excellent device for controlling power and signal in RF applications.

Conclusion

The BLC9H10XS-60PY is a high-performance P-channel silicon MOSFET designed for radio-frequency applications. It comes in a surface mount form factor and is suitable for space-constrained applications. Its field effect operation makes it an excellent choice for controlling power and signal in RF applications. It is capable of supporting frequencies ranging from 400 MHz to 3.2 GHz, delivering higher power than other RF MOSFETs.

The specific data is subject to PDF, and the above content is for reference