Name: BLC9H10XS-300PY
Brand: Ampleon USA Inc.
SKU: BLC9H10XS-300PY-ND
Price: 49.27 USD
Availability: InStock

Allicdata Part #:	BLC9H10XS-300PY-ND
Manufacturer Part#:	BLC9H10XS-300PY
Price:	$ 49.27
Product Category:	Discrete Semiconductor Products
Manufacturer:	Ampleon USA Inc.
Short Description:	BLC9H10XS-300P/SOT1273/REELDP
More Detail:	RF Mosfet LDMOS 50V 600mA 600MHz ~ 960MHz 21dB 300...
DataSheet:	BLC9H10XS-300PY Datasheet/PDF
Quantity:	1000

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$ 44.79030

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Specifications

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	600MHz ~ 960MHz
Gain:	21dB
Voltage - Test:	50V
Current Rating:	1.4µA
Noise Figure:	--
Current - Test:	600mA
Power - Output:	300W
Voltage - Rated:	108V
Package / Case:	SOT1273-1
Supplier Device Package:	SOT1273-1

Description

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The BLC9H10XS-300PY is a type of field effect transistor (FET) known as a metal oxide semiconductor field effect transistor (MOSFET). As a member of the RF FET family, it is commonly used for high power radio frequency (RF) applications such as RF amplifiers, RF switching, and RF power control. The MOSFET is considered an active component, meaning that it requires an external voltage or current source to act as a control input to achieve a desired result. While it is often used in RF applications, the BLC9H10XS-300PY can also be used in other devices such as digital logic circuits and video amplifiers.A field effect transistor is a three terminal device that can either amplify or switch a given electrical signal. The MOSFET is one of the most commonly used FETs due to its superior switching speed, low power consumption, and wide operating range. It gets its name from the structure of its gate electrode, which is composed of a metal oxide semiconductor (MOS) material. The gate is used to control the current flow from the source to the drain terminals of the device. The gate voltage, or voltage difference between the gate and the source, determines the amount of current flowing through the device.The BLC9H10XS-300PY operates in the frequency range of DC to 900 Mhz. It has an Idss rating of 50mA and a Vdss rating of 60V, allowing it to handle high voltage applications. The device has a large transconductance of about 140mS, which is essential for improving the power gain and RF performance of the transistor. It also has a low input capacitance of about 15pF and high drain to source diode breakdown voltage of about 70V.The BLC9H10XS-300PY is typically used in high power RF applications. The device’s high transconductance, low input capacitance, and high drain to source diode breakdown voltage make it well suited for amplifying or switching high power radio signals. It can also be used as a switch in logic circuits because of its fast switching speed and low power consumption. Further, the very low input capacitance of the device ensures that stray capacitance will not affect the switching speed of the device.In conclusion, the BLC9H10XS-300PY is a metal oxide semiconductor FET used in high power radio frequency applications such as RF amplifiers, RF switching, and RF power control. It has a very high transconductance, low input capacitance, and high drain to source diode breakdown voltage which make it well suited for high power radio frequency applications. It can also be used in digital logic circuits and video amplifiers due to its fast switching speed and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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BLC9H10XS-300PY-ND

BLC9H10XS-300PY

Discrete Semiconductor Products