BLC9G22XS-400AVTY

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BLC9G22XS-400AVTY is an N-channel enhancement-mode FET (field effect transistor) specifically designed for use in large-signal, low noise, high frequency applications from 500MHz up to 6GHz. It is preferred for its capability of supplying extremely high input/output isolation, very good intermodulation, low distortion and excellent linearity performances.

Application Field

BLC9G22XS-400AVTY is for use in many wireless applications that require the highest performance levels. It is intended for phase locked loop (PLL) frequency synthesizer, general purpose RF amplifier and modulator, down converter, preamplifier, mobile radio, VHF radio, radio pager and RADAR systems. This RF low noise field effect transistor can increase significantly an overall performance of a wireless device.

Working Principle

Field effect transistors operate on the principle of modulation of the flow of electrons (or holes) in a semiconductor channel due to an electric field. This means that the current that passes through the channel between the source and drain is not directly proportional to the applied voltage as with a conventional power transistor. Instead, voltage applied at gate creates an electric field which in turn modulates the current flow through the channel. As a result, the coupling between gate and source results in much higher input impedance, lower Gate-Source capacitance, better isolation and much lower power consumption.

BLC9G22XS-400AVTY uses N-channel enhancements mode. It has an extremely low noise figure and low power consumption that make it ideal for wireless applications such as radio pagers, wireless Local Area Networks (LANs), and mobile radio systems. The device also exhibits excellent gain flatness and power efficiency. The RF transistor also feature a low current ratings, which minimizes loss of performance due to mismatch in the device.

BLC9G22XS-400AVTY features a rugged construction that makes it ideal for use in high frequency, high power applications, such as radar systems and broadband amplifiers. The device is also well-suited for use in automotive and digital communications systems.

Conclusion

The BLC9G22XS-400AVTY field effect transistors are ideal for wireless applications such as mobile communications and Broadcast. It offers superior performances over traditional transistors thanks to the principle of modulation of the current through the channel by the electric field applied at the gate. This RF transistor exhibits excellent linearity, low distortion, low power consumption, extremely high input/output isolation, and excellent gain flatness.

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