Allicdata Part #: | 1603-1080-ND |
Manufacturer Part#: |
BLC9G20XS-550AVTZ |
Price: | $ 108.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 15.4DB SOT12587 |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 1.1A 1.8... |
DataSheet: | BLC9G20XS-550AVTZ Datasheet/PDF |
Quantity: | 54 |
1 +: | $ 98.19810 |
10 +: | $ 94.04850 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 1.81GHz ~ 1.88GHz |
Gain: | 15.4dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 580W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1258-7 |
Supplier Device Package: | SOT-1258-7 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
BLC9G20XS-550AVTZ is a MOSFET device developed by Infineon Technologies. It is designed to be used in RF (Radio Frequency) applications with recommended operating frequency of up to 10.0GHz. This product is part of the \'Small Signal\' MOSFET series, which is specifically developed for use in noise sensitive circuits.In this article, we will explore the application fields and working principles of the BLC9G20XS-550AVTZ.Application Fields
The BLC9G20XS-550AVTZ is suitable for a wide range of RF applications including mobile phones, mobile devices and Wi-Fi access points. It is designed for use in narrow-band amplifiers, receive-transmit systems, frequency conversion systems, as well as high speed signal transfer products. This MOSFET is also designed for use in digital filtering circuits, as well as power amplifiers. It is optimized for use in RF transceiver applications. The main application field of this product is medium-to-high power RF applications. It is optimized for use in systems that use intermediate frequency techniques.Working Principle
The working principle of a MOSFET is based on the principle of field-effect transistor (FET) operation. The MOSFET consists of three terminals, namely the source (or drain), the drain (or source) and the gate. All these elements are connected together and form a structure known as the ‘channel’. Electric current can be passed through the channel of a MOSFET due to a phenomenon known as the Channel Effect. This occurs when an electrical field created by the gate is applied to the channel, which causes electrons to be pushed through the channel, creating a flow of current. The flow and direction of the current can be controlled by varying the voltage of the gate.The BLC9G20XS-550AVTZ uses a specific type of MOSFET known as a Surface Acoustic Wave (SAW) device. This type of device is ideal for use in RF applications since it offers enhanced frequency response and stability. The BLC9G20XS-550AVTZ is designed to operate in the frequency range of up to 10GHz. This device is optimized for use in applications that require high switching speeds, low noise and high gain. It is ideal for use in applications where low power dissipation is needed and a small footprint is desired.Conclusion
The BLC9G20XS-550AVTZ is a MOSFET device developed by Infineon Technologies for use in RF applications. It is designed to operate in the frequency range of up to 10GHz and is optimized for use in narrow-band amplifiers, receive-transmit systems, frequency conversion systems, digital filtering circuits, and power amplifiers. The working principle of this device is based on the principle of FET operation and it takes advantage of the Channel Effect to create a flow of current through the device\'s channel.The specific data is subject to PDF, and the above content is for reference
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BLC9G22XS-400AVTZ | Ampleon USA ... | 60.28 $ | 280 | RF FET LDMOS 65V 15.3DB S... |
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BLC9G20XS-400AVTZ | Ampleon USA ... | 60.28 $ | 126 | RF FET LDMOS 65V 16.2DB S... |
BLC9G20LS-361AVTZ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 15.7DB S... |
BLC9H10XS-350AZ | Ampleon USA ... | 68.89 $ | 60 | BLC9H10XS-350A/SOT1273/TR... |
BLC9G15XS-400AVTZ | Ampleon USA ... | 68.89 $ | 50 | RF MOSFET LDMOS 32V SOT12... |
BLC9G15LS-400AVTZ | Ampleon USA ... | 77.5 $ | 50 | RF FET LDMOS 65V 16DB SOT... |
BLC9G20XS-550AVTZ | Ampleon USA ... | 108.02 $ | 54 | RF FET LDMOS 65V 15.4DB S... |
BLC9G21LS-60AVY | Ampleon USA ... | 31.43 $ | 100 | BLC9G21LS-60AV/SOT1275/RE... |
BLC9G21LS-60AVZ | Ampleon USA ... | 37.3 $ | 60 | BLC9G21LS-60AV/SOT1275/TR... |
BLC9G20LS-120VZ | Ampleon USA ... | 45.84 $ | 60 | RF FET LDMOS 65V 19.2DB S... |
BLC9G27LS-151AVZ | Ampleon USA ... | 53.33 $ | 67 | RF FET LDMOS 65V 15.6DB S... |
BLC9G20LS-150PVZ | Ampleon USA ... | 53.33 $ | 60 | RF FET LDMOS 65V SOT12753... |
BLC9G20LS-160PVZ | Ampleon USA ... | 53.33 $ | 60 | RF MOSFET LDMOS 28V SOT12... |
BLC9G22LS-160VTZ | Ampleon USA ... | 53.33 $ | 57 | RF MOSFET LDMOS 28V SOT12... |
BLC9G24XS-170AVZ | Ampleon USA ... | 53.33 $ | 14 | RF FET LDMOS 65V 15.5DB S... |
BLC9G20LS-240PVZ | Ampleon USA ... | 56.9 $ | 44 | RF FET LDMOS 65V 18DB SOT... |
BLC9G20LS-470AVTZ | Ampleon USA ... | 77.5 $ | 21 | RF FET LDMOS 65V 15.7DB S... |
BLC9G20LS-120VY | Ampleon USA ... | 38.61 $ | 1000 | RF FET LDMOS 65V 19.2DB S... |
BLC9G27XS-380AVTZ | Ampleon USA ... | 68.89 $ | 1000 | BLC9G27XS-380AVT/SOT1258/... |
BLC9H10XS-60PY | Ampleon USA ... | 28.5 $ | 1000 | BLC9H10XS-60P/SOT1273/REE... |
BLC9H10XS-60PZ | Ampleon USA ... | 28.5 $ | 1000 | BLC9H10XS-60P/SOT1273/TRA... |
BLC9G20LS-120VTY | Ampleon USA ... | 38.61 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G20LS-120VTZ | Ampleon USA ... | 41.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G20XS-160AVY | Ampleon USA ... | 42.62 $ | 1000 | RF MOSFET LDMOS 30V SOT12... |
BLC9G27LS-151AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 15.6DB S... |
BLC9G20LS-150PVY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET SOT1275 REELDPR... |
BLC9G20LS-160PVY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G22LS-160VTY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
BLC9G24XS-170AVY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 30V SOT12... |
BLC9G20LS-240PVY | Ampleon USA ... | 48.72 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLC9H10XS-300PY | Ampleon USA ... | 49.27 $ | 1000 | BLC9H10XS-300P/SOT1273/RE... |
BLC9G20XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
BLC9G22XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
BLC9G15XS-400AVTY | Ampleon USA ... | 59.12 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
BLC9G27XS-380AVTY | Ampleon USA ... | 59.12 $ | 1000 | BLC9G27XS-380AVT/SOT1258/... |
BLC9H10XS-350AY | Ampleon USA ... | 59.12 $ | 1000 | BLC9H10XS-350A/SOT1273/RE... |
BLC9G20LS-470AVTY | Ampleon USA ... | 66.51 $ | 1000 | RF FET LDMOS 65V 15.7DB S... |
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